Panasonic 2SC5346 Datasheet
Transistor
2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1982
Features
■
●
Satisfactory linearity of forward current transfer ratio hFE.
●
High collector to emitter voltage V
●
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*1
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
150
150
100
50
1.0
150
Unit
V
V
5
V
mA
mA
W
˚C
˚C
6.9±0.1
4.00.7 0.8
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1.2±0.1
+
0.1
0.45
–
0.05
1.05
±0.05 (1.45)
0.21.01.0
–0.05
+0.1
321
0.45
1:Emitter
2:Collector
3:Base
MT2 Type Package
0.65
max.
Unit: mm
2.5±0.1
0.5
4.5±0.114.5±0.5
2.5±0.1
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Symbol
I
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
NV
f
T
C
ob
Rank R S
h
FE
130 ~ 220 185 ~ 330
Conditions
VCB = 100V, IE = 0
IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
*1
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
150
5
130
typ
150
160
max
1
330
1
300
5
Unit
µA
V
V
V
mV
MHz
pF
1
Transistor
2SC5346
PC — Ta IC — V
2.0
)
W
(
1.6
C
1.2
0.8
0.4
Collector power dissipation P
0
300
FE
250
200
150
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
hFE — I
C
Ta=75˚C
25˚C
–25˚C
VCE=5V
V
25˚C
CE(sat)
Ta=75˚C
— I
–25˚C
C
IC/IB=10
)
CE
)
180
150
)
mA
(
120
C
90
60
Collector current I
30
0
012108264
)
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CB
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
f=1MHz
I
=0
E
Ta=25˚C
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
1 10 100 10003 30 300
Collector current IC (mA
100
50
Forward current transfer ratio h
0
1 10 100 10003 30 300
Collector current IC (mA
2
1
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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