Panasonic 2SC5335 Datasheet

Transistor

2SC5335(Tentative)

Silicon NPN epitaxial planer type

For low-frequency output amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*1

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*1

P

C

T

j

T

stg

Ratings

60
50
15

1.5

0.7

1.0

150

–55 ~ +150

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank R S T

h

FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

Conditions

VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 10V, IC = 150mA
IC = 500mA, IB = 50mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

60
50
15

400

typ

0.15
200

11

max

1

10

2000

0.4

15

Unit

µA
µA

V
V
V

V

MHz

pF

1

Transistor

2SC5335

PC — Ta IC — V

2.0

)
W

(

1.6

C

1.2

0.8

0.4

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

25˚C

1 10 100 10003 30 300

C

IC/IB=10

Ta=–25˚C

75˚C

Collector current IC (mA

V

CE

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

1800

FE

1500

1200

900

600

300

Forward current transfer ratio h

Ta=75˚C

Ta=25˚C

IB=100µA

90µA
80µA

70µA
60µA
50µA
40µA
30µA
20µA
10µA

)

C

VCE=10V

25˚C

–25˚C

10

V

(

3

CE(sat)

1

0.3

0.1

25˚C

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

1 10 100 10003 30 300

Collector current IC (mA

24

)
pF

(

20

ob

16

12

8

4

— I

CE(sat)

Ta=75˚C

–25˚C

Cob — V

CB

C

IC/IB=10

)

f=1MHz
I

=0

E

Ta=25˚C

Collector output capacitance C

0

1 10 100 10003 30 300

)

Collector current IC (mA

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)

2