Panasonic 2SC5295J User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5295J

Silicon NPN epitaxial planar type

For 2 GHz band low-noise amplification

■ Features

• High transition frequency f

• Low collector output capacitance (Common base, input open cir-

cuited) C

ob

• SS-Mini type package, allowing downsizing of the equipment and

T

0.27

±0.02

+0.05

1.60

–0.03

1.00

±0.05

3

12

(0.50)(0.50)

±0.05

0.80

(0.80)

+0.05

–0.03

0.85

±0.05

1.60

0.12

5˚

Unit: mm

+0.03
–0.01

(0.375)

automatic insertion through the tape packing

+0.05

5˚

■ Absolute Maximum Ratings Ta = 25°C

–0.03

0 to 0.02

0.70

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

15 V

10 V

2V

65 mA

125 mW
125 °C

−55 to +125 °C

Marking Symbol: 3S

0.10 max.

1: Base
2: Emitter
3: Collector

EIAJ: SC-89

SSMini3-F1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Foward transfer gain S

Maximum unilateral power gain G

Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

50 to 120 100 to 170

I

VCB = 10 V, IE = 01µA

CBO

I

VEB = 1 V, IC = 01µA

EBO

h

VCE = 8 V, IC = 20 mA 50 170 

FE

VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz

T

VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF

ob

2VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB

21e

VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB

UM

Publication date: December 2002 SJC00283BED

1

2SC5295J

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

140

)

120

mW
(

C

100

80

60

40

20

Collector power dissipation P

0

0 1406020 80 12040 100

Ambient temperature Ta (°C

V

 I

25°C

CE(sat)

= 85°C

T

a

−25°C

)
V

(

CE(sat)

0.1
IC / IB = 10

Ta = 25°C

IC  V

IB = 250 µA

hFE  I

= 85°C

T

a

25°C

−25°C

CE

200 µA

150 µA

100 µA

50 µA

C

VCE = 8 V

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 0.2 0.6 0.8 1.0 1.20.4 1.4

)

10

(pF)

ob

C

1

a

30

25

)

A

(m

20

C

15

10

Collector current I

5

0

012108264

)

C

Collector-emitter voltage VCE (V

160

140

FE

120

100

80

60

IC  V

BE

VCE = 8 V

T

= 85°C

a

25°C

−25°C

Base-emitter voltage VBE (V

Cob  V

CB

f = 1 MHz

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

40

Forward current transfer ratio h

20

Collector output capacitance

0

1 10 100

)

Collector current IC (mA

)

(Common base, input open circuited)

0.1
0128416

Collector-base voltage VCB (V

)

2

SJC00283BED