Panasonic 2SC5295 Datasheet
Transistors
2SC5295
Silicon NPN epitaxial planer type
For 2 GHz band low-noise amplification
■ Features
• High transition frequency f
• Low collector output capacitance C
• SS-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
T
ob
CBO
CEO
EBO
C
C
j
stg
15 V
10 V
2V
65 mA
125 mW
125 °C
−55 to +125 °C
+0.1
0.2
–0.05
3
1
(0.5)
5°
2
(0.5)
1.0
±0.1
1.6
±0.1
SS-Mini Type Package (3-pin)
Marking Symbol: 3S
±0.1
±0.15
0.8
1.6
(0.4)
0 to 0.1
(0.3)
±0.1
0.45
1°
±0.15
0.75
Unit: mm
+0.1
0.15
–0.05
±0.1
0.2
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio
*
Transition frequency f
Collector output capacitance C
Forward transfer gain | S
CBO
EBO
h
21e
FE
T
ob
Power gain GUM VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB
Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB
Note) *: Rank classification
Rank Q R S
h
FE
50 to 120 100 to 170 150 to 300
VCB = 10 V, IE = 01µA
VEB = 1 V, IC = 01µA
VCE = 8 V, IC = 20 mA 50 300
VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz
VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF
2
|
VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB
1
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