Panasonic 2SC5270A, 2SC5270 Datasheet

Po wer Transistors

2SC5270, 2SC5270A

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Features

■

●

High breakdown voltage, and high reliability through the use of a
glass passivation layer

●

High-speed switching

●

Wide area of safe operation (ASO)

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
base voltage

2SC5270
2SC5270A
2SC5270

2SC5270A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CES

CEO

EBO

=25˚C)

C

Ratings

1500
1600
1500
1600

600

5
20
12

8

120

3

150

–55 to +150

Unit

V

V

V
V
A
A
A

W

˚C
˚C

4.5

4.0

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

3.3±0.3

15.5±0.5

5°

123

φ3.2±0.1

5° 5°

26.5±0.5

5°

2.0 2.0 1.2 10.0

18.6±0.5

5.45±0.3

5.5±0.3

2.0

TOP–3E Full Pack Package

Unit: mm

3.0±0.3

23.4

5°

5°

0.7±0.1

1:Base
2:Collector
3:Emitter

22.0±0.5

Electrical Characteristics (T

■

Parameter

2SC5270
Collector cutoff
current

2SC5270A

2SC5270

2SC5270A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time

C

Symbol

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

t

stg

t

f

=25˚C)

Conditions

VCB = 1000V, IE = 0

VCB = 1500V, IE = 0
VCB = 1600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 6A
IC = 6A, IB = 1.5A
IC = 6A, IB = 1.5A
VCE = 10V, IC = 0.1A, f = 0.5MHz

IC = 6A, IB1 = 1.5A, IB2 = –3A

min

5

typ

3

1.5

0.12

max

50
50

1

1
50
12

3

1.5

2.5

0.2

Unit

µA

mA

µA

V
V

MHz

µs
µs

1

Po wer Transistors 2SC5270, 2SC5270A

PC—Ta hFE—I

140

)

(1)

W

120

(

C

100

80

60

40

20

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink.

(3) Without heat sink

=3.0W)

(P

C

Area of safe operation (ASO)

100

I

CP

I

10

)
A

(

Collector current I

C

C

1

0.1

0.01

Non repetitive pulse
T

=25˚C

C

0.001
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

10ms100ms

1ms

DC

t=100µs

C

2

10

FE

10

TC=100˚C

25˚C

–25˚C

VCE=5V

)

5000

V

(

CE(sat)

4000

3000

2000

1000

V

CE(sat)—IC

TC=100˚C

25˚C

IC/IB=4

–25˚C

Forward current transfer ratio h

1

110

10 10

)

Collector current IC (mA

3

2

10

10

5

4

)

Area of safe operation, horizontal operation ASO

)
A

(

C

Collector current I

)

50

40

30

20

10

0

0 2000500 15001000

Collector to emitter voltage VCE (V

f=64kHz, TC<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.

2SC5270

2SC5270A

<1mA

)

0

Collector to emitter saturation voltage V

2

10

1.0

0.6

0.8

)
µs

0.7

(

f

0.6

0.5

0.4

0.3

Switching time t

0.2

0.1

0

054132

End-of-scan current I

3

10

4

10

Collector current IC (mA

tf—I

B

TC=25˚C

=6A

I

C

fH=64kHz

B end

(A

10

)

)

5

10

TC=25˚C

9

I

=6A

C

fH=64kHz

8

)
µs

(

7

stg

6

5

4

3

Switching time t

2

1

0

054132

End-of-scan current I

2

t

stg—IB

B end

(A

)