Panasonic 2SC5243 Datasheet

Po wer Transistors

2SC5243

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Features

■

●

High breakdown voltage, and high reliability through the use of a
glass passivation layer

●

High-speed switching

●

Wide area of safe operation (ASO)

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

*

Non-repetitive peak

Symbol

V
V
V
I

C

I

CP

I

BP

P

C

T

j

T

stg

CBO

CES

EBO

*

=25˚C)

C

Ratings

1700
1700

6
15
30
10

200

3.5

150

–55 to +150

Unit

V
V
V
A
A
A

W

˚C
˚C

6.010.0

26.0±0.520.0±0.5

1.5

2.5

20.0±0.5

1.5

Solder Dip

10.9±0.5

123

φ 3.3±0.2

4.02.0

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

Unit: mm

5.0±0.3

3.0

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

TOP–3L Package

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time

C

Symbol

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

t

stg

t

f

=25˚C)

Conditions

VCB = 1700V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A,
Resistance loaded

min

5

typ

3

1.5

0.12

max

1
50
12

3

1.5

2.5

0.2

Unit

µA
µA

V
V

MHz

µs
µs

1

Po wer Transistors 2SC5243

PC—Ta IC—V

240
220

)
W

(

200

C

180
160
140
120
100

80
60
40

Collector power dissipation P

20

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

TC=–25˚C

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

=3.0W)

(P

C

(3)

(2)

V

CE(sat)—IC

IC/IB=3.5

25˚C

100˚C

Collector current IC (A

)

)

CE

16

14

)

12

A

(

C

10

8

6

4

Collector current I

2

0

012108264

TC=25˚C

IB=1000mA

800mA

600mA

400mA

200mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

100

)
V

(

BE(sat)

10

TC=–25˚C

1

100˚C

25˚C

0.1

Base to emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (A

IC/IB=3.5

)

hFE—I

1000

FE

100

10

1

Forward current transfer ratio h

0.1

0.01 0.1 1 10

)

Collector current IC (A

Area of safe operation, horizontal operation ASO

50

40

)
A

(

C

30

20

Collector current I

10

0

0 20001600400 1200800

Collector to emitter voltage VCE (V

C

=5V

V

CE

TC=100˚C

25˚C

–25˚C

)

f=64kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation

<1mA

)

1000

)

100

˚C/W

(
(t)

th

10

1

0.1

Thermal resistance R

0.01

–4

10

–3

2

R

—t

th(t)

Note: Rth was measured at Ta=25˚C and under natural convection

(1) P

=10V × 0.3A (3W) and without heat sink

T

=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

(1)

(2)

–1

–2

10

10

Time t (s

1010

110

)

2

10

3

4

10