Panasonic 2SC5223 Datasheet

Po wer Transistors

6.5±0.1

5.3±0.1

4.35±0.1

4.6±0.1

2.3±0.1

0.75±0.1

123

0.93±0.1

2.5±0.1

0.8max

1.0±0.2

7.3±0.1

1.8±0.1

2.3±0.1

0.5±0.1

0.5±0.1

0.1±0.05

1.0±0.1

6.5±0.2

2.3

5.35

4.35

13.3±0.3

2.3±0.1

5.5±0.26.0

1.8

0.75

0.6

3

2.3

21

0.5±0.1

2SC5223

Silicon NPN triple diffusion planar type

For high-speed switching

Features

■

●

High collector to base voltage V

●

High collector to emitter V

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage

CEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CBO

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

Ratings

500
500

7

2.0

1.0
10

150

–55 to +150

VCB = 400V, IE = 0
VEB = 5V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 50mA
VCE = 5V, IC = 330mA
IC = 330mA, IB = 33mA
IC = 330mA, IB = 33mA

Unit

V
V
V
A

A
W
˚C
˚C

Conditions

min

500
500

7
100
100

1:Base
2:Collector
3:Emitter
U Type Package

1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)

typ max

100

10

1.0

1.5

Unit: mm

Unit: mm

Unit

µA
µA

V
V
V

V
V

1

Po wer Transistors 2SC5223

PC—Ta IC—V

12

)
W

(

10

C

8

6

4

2

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.001

0.003

Collector current IC (A

Without heat sink

V

BE(sat)—IC

IC/IB=10

TC=–25˚C

25˚C

100˚C

0.01 0.1 1

0.03 0.3

)

CE

)

600

500

)
A

(

400

C

300

200

Ta=25˚C

IB=6mA

5mA
4mA

3mA
2mA

1mA

Collector current I

100

0

0654132

)

Collector to emitter voltage VCE (V

hFE—I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

TC=100˚C

25˚C

–25˚C

)

=5V

V

CE

10

V

(

CE(sat)

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

120

)
pF

(

100

ob

80

60

40

20

V

CE(sat)—IC

3

1

0.001

0.01 0.1 1

0.003

0.03 0.3

Collector current IC (A

Cob—V

CB

TC=100˚C

25˚C

IE=0
f=1MHz
Ta=25˚C

IC/IB=10

–25˚C

)

Collector output capacitance C

0

0.001

0.01 0.1 1

0.003

0.03 0.3

Collector current IC (A

)

0

1 10 100 10003 30 300

Collector to base voltage VCB (V

)

2