Panasonic 2SC5216 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SC5216

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Features

■

●

High transition frequency fT.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

15

8
3

50
200
150

–55 ~ +150

Unit

mA

mW

˚C
˚C

Unit: mm

V
V
V

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : FB

Electrical Characteristics (Ta=25˚C)

■

Parameter

Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Power gain

hFE ratio

Symbol

I

EBO

V

CBO

h

FE

V

CE(sat)

V

BE

f

T

C

ob

C

rb

PG

h

FE(RATIO)

Conditions

VEB = 2V, IC = 0
IC = 100µA, IE = 0
VCE = 4V, IC = 2mA
IC = 20mA, IB = 4mA
VCE = 4V, IC = 2mA
VCB = 10V, IE = –15mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCB = 6V, IE = 0, f = 1MHz
VCB = 10V, IE = –10mA, f = 200MHz
VCE = 4V, IC = 100µA
VCE = 4V, IC = 2mA

min

15

100

0.8

0.6

14

0.6

typ

0.7

1.3

1.0

0.4
18

max

2

350

0.5

1.9

1.4

22

1.5

Unit

µA

V

V
V

GHz

pF
pF

dB

1

Transistor

2SC5216

PC — Ta IC — V

250

)
mW

(

200

C

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

1 10 100 10003 30 300

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=5

)

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

0654132

IB=600µA

Collector to emitter voltage VCE (V

hFE — I

C

300

FE

250

Ta=75˚C

200

150

100

50

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

500µA
400µA

300µA
200µA

100µA

VCE=4V

)

IC — V

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

Cob — V

3.0

)
pF

(

2.5

ob

2.0

1.5

1.0

0.5

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

BE

VCE=4V

25˚C

Ta=75˚C –25˚C

CB

f=1MHz
I

=0

E

Ta=25˚C

)

)

2