Panasonic 2SC5145 Datasheet

Po wer Transistors

2SC5145

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

800
800
500

8

10

5
3

40

1.3

150

–55 to +150

Unit

V
V
V
V
A
A
A

W

˚C
˚C

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

14.7±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

V

CEO(sus)

T est circuit

50/60Hz

mercury relay

120Ω

6V

Symbol

I

CBO

I

EBO

V

CEO(sus)

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

1Ω

Conditions

VCB = 800V, IE = 0
VEB = 5V, IC = 0

*

IC = 0.2A, L = 25mH
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V

X

L 25mH

Y

15V

G

min

500

15

8

typ8max

100
100

1

1.5

1
3
1

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC5145

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

BE(sat)—IC

25˚C

TC=–25˚C

100˚C

Collector current IC (A

IC/IB=5

)

CE

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

0108264

)

Collector to emitter voltage VCE (V

IB=1200mA

1000mA

800mA

hFE—I

1000

300

FE

100

30

10

3

1

Forward current transfer ratio h

0.3

0.1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

–25˚C

Collector current IC (A

600mA

400mA

C

300mA

200mA

150mA

TC=25˚C

100mA

50mA

20mA

VCE=5V

25˚C

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

Collector current IC (A

fT—I

C

VCE=10V
f=1MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

25˚C

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)

µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

t

on

, tf — I

stg

t

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(I

B1

V

=200V

CC

=25˚C

T

C

t

f

Area of safe operation (ASO)

10

I

CP

3

I

)
A

(

Collector current I

)

C

1

C

0.3

0.1

0.03

0.01

0.003
1 10 100 10003 30 300

10ms

Non repetitive pulse
T

=25˚C

C

Collector to emitter voltage VCE (V

t=0.5ms

1ms

DC

)