Panasonic 2SC5121 Datasheet

Po wer Transistors

2SC5121

Silicon NPN triple diffusion planar type

For general amplification

Features

■

●

High collector to base voltage V

●

High collector to emitter V

●

Small collector output capacitance C

●

TO-126 package, which is fitted to a heat sink without any insu­lation parts

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

CEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CBO

ob

=25˚C)

C

Ratings

400
400

7

100

70

1.2

150

–55 to +150

Unit

V
V

V
mA
mA

W
˚C
˚C

Unit: mm

+0.5

8.0

–0.1

3.8±0.3

11.0±0.516.0±1.0

1.9±0.1

0.75±0.1 0.5±0.1 1.76±0.1

4.6±0.2

1

φ3.16±0.1

0.5±0.1

2.3±0.2

32

3.2±0.2

3.05±0.1

1:Emitter
2:Collector
3:Base
JEDEC:TO–126(b)

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

I

CBO

Hot I
V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

=25˚C)

C

CEO

Conditions

VCB = 300V, IE = 0
VCE = 380V, IB = 0, Ta = 80°C
IC = 100µA, IB = 0
IE = 1µA, IC = 0
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

400

7

30

50

typ

80

max

Unit

10
10

µA
µA

V
V

150

1.2

V

MHz

4

8

pF

1

Po wer Transistors 2SC5121

PC—Ta IC—V

2.4

)
W

(

2.0

C

1.6

1.2

0.8

0.4

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

0.1

V

CE(sat)—IC

Without heat sink

IC/IB=10

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

1000

300

100

C

TC=25˚C

IB=1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

VCE=10V

120

100

)
mA

(

C

Collector current I

)

)
pF

(

ob

80

60

40

20

0

01.21.00.80.2 0.60.4

12

10

8

6

IC—V

BE

VCE=10V

Base to emitter voltage VBE (V

Cob—V

CB

IE=0
f=1MHz
T

=25˚C

C

)

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

Collector current IC (mA

4

2

Collector output capacitance C

0

1 10 100 10003 30 300

)

Collector to base voltage VCB (V

)

2