Panasonic 2SC5104 Datasheet

Po wer Transistors

2SC5104

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

500
500
400

7
6
3

1.2
30

1.3

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

14.7±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz

IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V

min

400

10

8

typ10max

100
100

40

1.0

1.5

1.0

3.0

0.3

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC5104

PC—Ta IC—V

40

)
W

(

(1)

C

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

TC=–25˚C

1

25˚C

0.3

Base to emitter saturation voltage V

0.1

0.1 1 10 1000.3 3 30

Collector current IC (A

=Ta

(1) T

C

(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

=1.3W)

(P

C

V

BE(sat)—IC

125˚C

IC/IB=5

)

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=125˚C

30

10

3

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

–25˚C

25˚C

Collector current IC (A

TC=25˚C

IB=500mA

400mA

300mA

200mA

100mA

50mA

C

VCE=5V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

0.3

Transition frequency f

0.1

V

CE(sat)—IC

TC=100˚C

25˚C

3

1

0.1 1 10 1000.3 3 30

–25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=1MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

)

=25˚C

)

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
04132

Collector current IC (A

, tf — I

stg

t

stg

t

on

C

Pulsed tw=1ms
Duty cycle=1%

=10

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

t

f

Area of safe operation (ASO)

100

30

)

10

A

I

(

Collector current I

)

CP

C

I

C

3

1

0.3

0.1

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

300ms

)