Panasonic 2SC5077 Datasheet

Po wer Transistors

2SC5077, 2SC5077A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package with outstanding insulation, which can be in­stalled to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

2SC5077
2SC5077A
2SC5077
2SC5077A

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

800
900
800
900
500

8

15

7
4

45

2

150

–55 to +150

FE

Unit

V

V

V
V
A
A
A

W

˚C
˚C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

4.1±0.2

8.0±0.2

Solder Dip

7°

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

TO–220E Full Pack Package

Unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SC5077

2SC5077A
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 800V, IE = 0
VCB = 900V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 4A
IC = 4A, IB = 0.8A
IC = 4A, IB = 0.8A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V

min

500

15

8

typ max

100
100
100

1.0

1.5

1.0

1.0

3.0

0.3

Unit

µA

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC5077, 2SC5077A

PC—Ta IC—V

60

)
W

(

50

(1)

C

40

30

20

(2)

10

(3)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

(4)

V

BE(sat)—IC

IC/IB=5

CE

12

10

)
A

(

8

C

6

4

Collector current I

2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

30

TC=25˚C

IB=1200mA

1000mA

800mA

600mA

400mA

300mA

200mA

C

100mA

VCE=5V

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

)

300

MHz

(

T

100

30

V

CE(sat)—IC

3

1

TC=100˚C

25˚C

0.1 1 10 1000.3 3 30

–25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=1MHz
T

IC/IB=5

=25˚C

C

)

TC=–25˚C

1

25˚C

0.3

Base to emitter saturation voltage V

0.1

0.1 1 10 1000.3 3 30

1000

)
pF

(

300

ob

100

30

10

3

100˚C

Collector current IC (A

Cob—V

CB

IE=0
f=1MHz
T

=25˚C

C

)

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

10

3

Forward current transfer ratio h

1

0.1 1 10 1000.3 3 30

Collector current IC (A

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
082647153

)

Collector current IC (A

, tf — I

stg

TC=–25˚C
25˚C

100˚C

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

t

stg

t

on

t

f

10

3

Transition frequency f

1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

Area of safe operation (ASO)

100

30

I

CP

)

I

10

A

C

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=0.5ms

DC

1ms

)

2