Panasonic 2SC5026 Datasheet

Transistor

2SC5026

Silicon NPN epitaxial planer type

For low-frequency output amplification
Complementary to 2SA1890

Features

■

●

Low collector to emitter saturation voltage V

●

High collector to emitter voltage V

●

Mini Power type package, allowing do wnsizing of the equipment

CEO

.

and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

80
80

1.5

150

–55 ~ +150

5

1
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : 2A

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

hFE Rank classification

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

120 ~ 240 170 ~ 340

Conditions

VCB = 40V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

80
80

5

120

60

typ

max

0.15

0.85
120

10

*2

Pulse measurement

0.1

340

0.3

1.2

20

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor

2SC5026

PC — Ta IC — V

1.4

)
W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

25˚C

C

IC/IB=10

Ta=–25˚C

75˚C

Collector current IC (A

)

V

CE

)

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

Collector to emitter voltage VCE (V

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

hFE — I

Ta=75˚C

25˚C

–25˚C

IB=8mA

7mA

6mA
5mA

4mA
3mA

2mA

1mA

)

C

VCE=2V

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

Emitter current IE (mA

CE(sat)

25˚C

fT — I

— I

Ta=75˚C

–25˚C

E

C

IC/IB=10

)

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

60

50

ob

40

30

20

10

CB

Collector output capacitance C

0

1 10 100 10003 30 300

Collector to base voltage VCB (V

2

)