Panasonic 2SC5018 Datasheet

Transistor

2SC5018

Silicon NPN triple diffusion planer type

For high breakdown voltage high-speed switching

Features

■

●

High collector to base voltage V

●

High emitter to base voltage V

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

*

EBO

CBO

.

.

Ratings

500
400

7

1.5

0.8
1

150

–55 ~ +150

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fill time

Symbol

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

Conditions

VCB = 500V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 300mA
IC = 100mA, IB = 10mA
IC = 100mA, IB = 10mA

*1

*1

*1

VCB = 10V, IE = –50mA, f = 10MHz

IC = 200mA, IB1 = 40mA
IB2 = –40mA, VCC = 150V

min

50
10

typ

max

100
100
300

0.1

0.8

0.5

1.0

20

0.7

4.0

0.4

*1

Pulse measurement

Unit

µA
µA

V
V

MHz

µs
µs
µs

1

Transistor 2SC5018

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

75˚C

C

IC/IB=10

25˚C

Collector current IC (A

)

V

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

200

FE

160

120

80

40

Ta=75˚C

25˚C

–25˚C

Ta=25˚C

IB=1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

C

VCE=5V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

CE(sat)

Ta=75˚C

25˚C

— I

–25˚C

C

IC/IB=10

)

Forward current transfer ratio h

0

0.001 0.01 0.1 10.003 0.03 0.3

Collector current IC (A

)

2