Panasonic 2SC4985 Datasheet
Po wer Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High collector to base voltage V
●
High collector to emitter V
●
Allowing automatic insertion with radial taping
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CEO
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CBO
Ratings
900
800
7
2
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2 4.5±0.2
3.8±0.2
10.8±0.216.0±1.0
2.5±0.1
0.7±0.1
0.8C
123
0.85±0.10.65±0.1
1.0±0.1
0.7±0.1
0.5±0.1
2.5±0.22.5±0.2
Unit: mm
90°
0.8C
0.4±0.1
2.05±0.2
MT3 Type Package
0.8C
1:Emitter
2:Collector
3:Base
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 50mA
VCE = 5V, IC = 500mA
IC = 200mA, IB = 40mA
IC = 200mA, IB = 40mA
VCB = 10V, IE = –50mA, f = 200MHz
IC = 200mA, IB1 = 40mA, IB2 = –80mA,
VCC = 250V
min
800
6
3
typ80max
50
50
1.5
1
1
3
1
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Po wer Transistors 2SC4985
PC—Ta IC—V
2.0
)
W
(
1.6
C
1.2
0.8
0.4
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
3
V
(
BE(sat)
Base to emitter saturation voltage V
TC=–25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1
Collector current IC (A
V
BE(sat)—IC
Without heat sink
IC/IB=5
25˚C
100˚C
)
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
IB=200mA
Collector current I
0.2
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
100
FE
30
TC=100˚C
10
3
1
0.3
Forward current transfer ratio h
0.1
0.01 310.10.03 0.3
Collector current IC (A
25˚C
–25˚C
TC=25˚C
100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
C
VCE=5V
)
)
V
(
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
IC/IB=5
1
0.01 0.03 0.1 0.3 1
Collector current IC (A
fT—I
3
1
0.001
0.01 0.1 1
0.003
Collector current IC (A
TC=100˚C
25˚C
C
VCE=10V
f=200MHz
T
=25˚C
C
0.03 0.3
–25˚C
)
)
2
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