Panasonic 2SC4968 Datasheet

Transistor

2SC4968

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

Features

■

●

Low noise figure NF.

●

High gain.

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

h

FE

f

T

C

ob

| S

21e

GUM
NF

Ratings

–55 ~ +150

2

|

Unit

15
10

2

80
600
150

V
V
V

mA

mW

˚C
˚C

Conditions

VCB = 10V, IE = 0
VEB = 2V, IC = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
VCE = 8V, IC = 20mA
VCE = 8V, IC = 20mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

typ

15
10
50

150

5

6

0.7

10

13.5
15

+0.2

0.45

–0.1

1:Base

2.3±0.2

2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A

max

300

1.2

1
1

2

Unit: mm

Unit

µA
µA

V
V

GHz

pF
dB
dB
dB

1

Transistor 2SC4968

PC — Ta IC — V

800

)

700

mW

(

C

600

500

400

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

)

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012108264

IB=200µA

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

180µA
160µA
140µA

120µA
100µA

80µA
60µA
40µA

20µA

VCE=8V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

12

)

10

GHz

(

T

8

6

4

2

Transition frequency f

0

0.1 1 10 1000.3 3 30

IC — V

BE

VCE=8V

25˚C

Ta=75˚C

–25˚C

fT — I

C

VCE=8V
f=800MHz
Ta=25˚C

Collector current IC (mA

)

)

)
pF

(

Cob — V

2.4

2.0

ob

1.6

1.2

0.8

0.4

CB

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

GUM — I

24

)
dB

(

20

16

12

8

4

Maximum unilateral power gain GUM

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

C

VCE=8V
f=800MHz
Ta=25˚C

NF — I

C

)
dB

(

12

10

8

6

4

VCE=8V
(R

=50Ω)

g

f=800MHz
Ta=25˚C

Noise figure NF

2

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

)