Panasonic 2SC4960 Datasheet

Po wer Transistors

2SC4960, 2SC4960A

Silicon NPN triple diffusion planar type

For power switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package with outstanding insulation, which can be in­stalled to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to emitter voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

2SC4960
2SC4960A

2SC4960
2SC4960A

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

900
900
900
800
900

7
2
1

0.3
40

3

150

–55 to +150

FE

Unit

W

˚C
˚C

Unit: mm

15.0±0.3

11.0±0.2

φ3.2±0.1

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

V

10.9±0.5

V

2.0±0.2

1.1±0.1

5.45±0.3

321

V

V
A

TOP–3 Full Pack Package(a)

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

A
A

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SC4960
2SC4960A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
IC = 0.2A, IB = 0.04A
IC = 0.2A, IB = 0.04A
VCE = 10V, IC = 0.05A, f = 1MHz

IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V

min

800
900

6
3

typ4max

50
50

1.5
1

1
3
1

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC4960, 2SC4960A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

3

V

(

BE(sat)

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03 0.1 0.3 1

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(P

=3.0W)

C

V

BE(sat)—IC

TC=–25˚C

25˚C

100˚C

Collector current IC (A

IC/IB=5

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=200mA

Collector current I

0.2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

100

FE

30

TC=100˚C

10

3

1

0.3

Forward current transfer ratio h

0.1

0.01 310.10.03 0.3

Collector current IC (A

25˚C

–25˚C

TC=25˚C

100mA

90mA
80mA
70mA

60mA

50mA
40mA

30mA

20mA
10mA

C

VCE=5V

)

)
V

(

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

IC/IB=5

1

0.01 0.03 0.1 0.3 1

Collector current IC (A

fT—I

3

1

0.001

0.01 0.1 1

0.003

Collector current IC (A

TC=100˚C

25˚C

C

VCE=10V
f=1MHz
T

=25˚C

C

0.03 0.3

–25˚C

)

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01

01.00.80.2 0.60.4

Collector current IC (A

2

ton, t

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=250V

CC

=25˚C

T

C

t

stg

t

on

t

f

Area of safe operation (ASO)

10

3

I

)
A

(

CP

I

C

1

C

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

10ms

DC

2SC4960

2SC4960A

t=1ms

)