Panasonic 2SC4953 Datasheet

Po wer Transistors

2SC4953

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Dielectric breakdown voltage of the package: > 5kV

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

500
500
400

7
6
3

1.2
30

2.0

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

Unit: mm

9.9±0.3

φ3.2±0.1

15.0±0.513.7±0.2

1.4±0.2

1

1.6±0.2

0.8±0.1

2.54±0.3

23

5.08±0.5

TO–220D Full Pack Package

4.2±0.2

4.6±0.2

2.9±0.2

3.0±0.5

2.6±0.1

0.55±0.15

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz

IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V

min

400

10

8

typ10max

100
100

40

1.0

1.5

1.0

3.0

0.3

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC4953

IC—V

CE

5.0

4.5

4.0

)
A

(

3.5

C

3.0

2.5

2.0

1.5

Collector current I

1.0

0.5

0

012108264

I

B

Collector to emitter voltage VCE (V

fT—I

C

100

)

30

MHz

(

T

10

3

1

0.3

Transition frequency f

0.1

0.01 0.03 0.1 0.3 1

VCE=10V
f=1MHz
T

Collector current IC (A

TC=25˚C

=500mA

450mA
400mA
350mA
300mA

250mA
200mA
150mA
100mA

50mA

=25˚C

C

)

IC—V

CE(sat)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

0 2.52.00.5 1.51.0

)

Collector to emitter saturation voltage V

ton, t

, tf — I

stg

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Pulsed tw=1ms
Duty cycle=1%
I

C/IB

V

CC

T

C

t

stg

t

on

t

f

Switching time t

0.03

0.01
0 4.01.0 3.02.0 3.50.5 2.51.5

Collector current IC (A

TC=–25˚C

C

=10(2IB1=–IB2)

=200V

=25˚C

I

C/IB

25˚C

125˚C

CE(sat)

)

hFE—I

C

=5

(V

300

FE

100

TC=125˚C

30

10

Forward current transfer ratio h

3

0.01 1 100.10.003 0.3 30.03

)

Collector current IC (A

VCE=5V

25˚C

–25˚C

)

Area of safe operation (ASO)

100

30

)

10

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

I

CP

I

C

1s

Non repetitive pulse

Ta=25˚C
Ta=85˚C

t=1ms

10ms

)

Area of safe operation, reverse bias ASO

4.0

3.5

)

3.0

A

(

C

2.5

2.0

1.5

1.0

Collector current I

0.5

0

0 800200 600400 700100 500300

Collector to emitter voltage VCE (V

2

IC/IB=5
L

coil

T

=25˚C

C

=100µH

)