Panasonic 2SC4898 Datasheet
Po wer Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CEO
I
CP
I
C
P
C
T
j
T
stg
CBO
CE(sat)
=25˚C)
C
Ratings
1000
500
10
5
40
2
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Unit: mm
9.9±0.3
φ3.2±0.1
15.0±0.513.7±0.2
1.4±0.2
1
1.6±0.2
0.8±0.1
2.54±0.3
23
5.08±0.5
TO–220D Full Pack Package
4.2±0.2
4.6±0.2
2.9±0.2
3.0±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 1000V, IE = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 250V
min
20
typ8max
100
100
40
1
1.5
3
1.0
Unit
µA
µA
V
MHz
µs
µs
µs
1
Po wer Transistors 2SC4898
IC—V
CE
10
9
8
)
A
(
7
C
6
5
4
3
Collector current I
2
1
0
012108264
Collector to emitter voltage VCE (V
Area of safe operation (ASO)
100
I
CP
10
)
A
(
I
Collector current I
C
C
1
0.1
0.01
0.001
10ms
Non repetitive pulse
T
=25˚C
C
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
t=0.5ms
1ms
1s
TC=25˚C
=0.7A
I
B
0.6A
0.5A
0.4A
0.3A
0.2A
0.1A
V
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
)
CE(sat)—IC
Collector current IC (A
Area of safe operation, reverse bias ASO
6
5
)
A
(
4
C
3
2
Collector current I
1
0
0 12001000800200 600400
)
Collector to emitter voltage VCE (V
IC/IB=5
T
C
IC/IB=5
=–I
I
B1
L
coil
=25˚C
T
C
<1mA
=25˚C
)
B2
=100µH
hFE—I
1000
FE
300
100
30
10
3
Forward current transfer ratio h
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
)
C
TC=25˚C
=5V
V
CE
)
Ta=25˚C
(1) Without heat sink
)
(2) With a 100 × 80 × t2mm Al heat sink
30
˚C/W
(
(t)
10
th
3
1
Thermal resistance R
0.3
2
R
—t
th(t)
130.3 10 30 100 300
Time t (s
)
(1)
(2)
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