Panasonic 2SC4892 Datasheet

Po wer Transistors

2SC4892

Silicon NPN triple diffusion planar type

For power switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

900
900
800

7
2
1

0.3
15

2

150

–55 to +150

FE

Unit

W

˚C
˚C

Unit: mm

5.0±0.1

1.010.0±0.2

2.5±0.2

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

1.2±0.1

90°

C1.0

2.25±0.2

0.55±0.1

4.2±0.2

13.0±0.2

18.0±0.5
Solder Dip

V
V

C1.0

123

V
V
A
A

2.5±0.2 2.5±0.2

1:Base
2:Collector
3:Emitter

MT4 Type Package

A

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
IC = 0.2A, IB = 0.04A
IC = 0.2A, IB = 0.04A
VCE = 10V, IC = 0.05A, f = 1MHz

IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V

min

800

6
3

typ4max

50
50

1.5
1

1
3
1

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC4892

PC—Ta IC—V

20

=Ta

(1) T

)
W

(

(1)

C

15

10

5

(2)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

)

3

V

(

BE(sat)

Base to emitter saturation voltage V

TC=–25˚C

1

0.3

0.1

0.03

0.01

0.01 0.03 0.1 0.3 1

Collector current IC (A

C

(2) Without heat sink

=2.0W)

(P

C

BE(sat)—IC

100˚C

IC/IB=5

25˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=200mA

Collector current I

0.2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

100

FE

30

TC=100˚C

10

3

1

0.3

Forward current transfer ratio h

0.1

0.01 310.10.03 0.3

Collector current IC (A

25˚C

–25˚C

TC=25˚C

100mA

90mA
80mA
70mA

60mA

50mA
40mA

30mA

20mA
10mA

C

VCE=5V

)

)
V

(

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

IC/IB=5

1

0.01 0.03 0.1 0.3 1

Collector current IC (A

fT—I

3

1

0.001

0.01 0.1 1

0.003

Collector current IC (A

TC=100˚C

25˚C

C

VCE=10V
f=1MHz
T

C

0.03 0.3

–25˚C

)

=25˚C

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01

01.00.80.2 0.60.4

Collector current IC (A

2

ton, t

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=250V

CC

=25˚C

T

C

t

stg

t

on

t

f

Area of safe operation (ASO)

10

3

I

)
A

(

C

0.03

0.01

Collector current I

0.003

0.001

)

I

1

0.3

0.1

1 10 100 10003 30 300

Collector to emitter voltage VCE (V

CP

C

Non repetitive pulse

=25˚C

T

C

10ms

DC

t=1ms

)