Panasonic 2SC4835G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC4835G

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High forward transfer gain S

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga­zine packing

2



21e

T

■ Package

•

Code
SMini3-F2

•

Marking Symbol: 3M

•

Pin Name

1: Base
2: Emitter
3: Collector

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

15 V

10 V

2V

80 mA

150 mW
150 °C

−55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

1, 2

Forward current transfer ratio

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)
Forward transfer gain S

Maximum unilateral power gain G

Noise figure NF VCE = 8 V, IC = 7 mA, f = 800 MHz 1.3 2.0 dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank Q R S

h

FE

*

50 to 100 80 to 130 100 to 200

CBOIC

CEOIC

I

CBO

I

EBO

h

FE

21e

UM

= 10 µA, IE = 015V
= 100 µA, IB = 010 V

VCB = 10 V, IE = 01µA

VEB = 2 V, IC = 01µA

VCE = 8 V, IC = 20 mA 50 200 

VCE = 8 V, IC = 15 mA, f = 800 MHz 5 6 GHz

T

VCB = 10 V, IE = 0, f = 1 MHz 0.7 1.2 pF

ob

2VCE = 8 V, IC = 15 mA, f = 800 MHz 11 14 dB

VCE = 8 V, IC = 15 mA, f = 800 MHz 15 dB

Publication date: May 2007 SJC00368AED

1

2SC4835G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

0.1

CE(sat)

a

C

IC / IB = 10

Ta = 75°C

25°C

−25°C

IC  V

hFE  I

Ta = 75°C

25°C

−25°C

CE

IB = 200 µA

C

Ta = 25°C

180 µA

160 µA

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

VCE = 8 V

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

12

10

)

GHz
(

8

T

6

4

Transition frequency f

2

24

20

)

mA

(

16

C

12

8

Collector current I

4

0

012108264

)

Collector-emitter voltage VCE (V

600

500

FE

400

300

200

Forward current transfer ratio h

100

IC  V

BE

VCE = 8 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

C

VCE = 8 V
f = 800 MHz

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

2.4

(pF)

ob

C

2.0

1.6

1.2

0.8

0.4

Collector output capacitance

(Common base, input open circuited)

0

0.1 1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

Collector current IC (mA

GUM  I

24

)

dB

(

20

UM

C

)

VCE = 8 V
f = 800 MHz

= 25°C

T

a

0

0.1 1 10 100

C

VCE = 8 V

= 50 Ω)

(R

g

f = 800 MHz

= 25°C

T

a

)

Collector current IC (mA

NF  I

12

10

)

16

12

8

4

dB

8

(

6

4

Noise figure NF

2

Maximum unilateral power gain G

0

0.1 1 10 100

)

Collector current IC (mA

)

0

0.1 1 10 100

Collector current IC (mA

)

SJC00368AED