Panasonic 2SC4809 Datasheet

Transistor

2SC4809

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Features

■

●

High transition frequency fT.

●

Small collector output capacitance Cob and common base reverse
transfer capacitance C

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

.

rb

Symbol

Ratings

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

15
10

3

50
125
125

–55 ~ +125

Unit

mA

mW

˚C
˚C

Unit: mm

1.6±0.15

0.8±0.1 0.40.4

–0.05

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

V

0.2±0.1

0 to 0.1

+0.1

0.2

3

–0.05

+0.1

0.15

V
V

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

Marking symbol : 1S

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance

Symbol

I

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

rbb' · C
C

rb

C

hFE ratio

*

hFE Rank classification

Rank P Q R

h

FE

75 ~ 130 110 ~ 220 200 ~ 400

Marking Symbol 1SP 1SQ 1SR

Conditions

VCB = 10V, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 31.9MHz
VCB = 4V, IE = 0, f = 1MHz
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA

min

10

3

75

1.4

0.75

typ

1.9

1.4
11

0.45

max

1

400

0.5

2.7

1.6

Unit

µA

V
V

V

GHz

pF

PS

pF

1

Transistor

2SC4809

PC — Ta IC — V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

C

IC/IB=10

Ta=75˚C

IC — V

25˚C

fT — I

BE

–25˚C

E

VCE=4V

VCB=4V
Ta=25˚C

)

CE

80

70

)

60

mA

(

C

50

40

30

20

Collector current I

10

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

360

FE

300

240

180

Ta=75˚C

25˚C

Ta=25˚C

=500µA

I

B

400µA
300µA

200µA

100µA

)

C

VCE=4V

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

4.0

3.5

)
GHz

3.0

(

T

2.5

2.0

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

Cob — V

1.6

)
pF

1.4

(

ob

1.2

1.0

0.8

0.6

0.4

0.2

Collector output capacitance C

0

1 3 10 30 100

25˚C

Ta=75˚C

–25˚C

CB

)

IE=0
f=1MHz
Ta=25˚C

Collector to base voltage VCB (V

120

60

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

–25˚C

1.5

1.0

Transition frequency f

0.5

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Emitter current IE (mA

)

2