Panasonic 2SC4562G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC4562G

Silicon NPN epitaxial planar type

For high-frequency amplification

Complementary to 2SA1748G

■ Features

• High transition frequency f

• Small collector output capacitance (Common base, input open cir-

cuited) C

ob

• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing

T

■ Package

•

Code
SMini3-F2

•

Marking Symbol: AM

•

Pin Name

1: Base
2: Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +150 °C

stg

50 V

50 V

5V

50 mA

150 mW

150 °C

3: Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

*

200 to 400 250 to 500

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

= 10 µA, IE = 050V

= 1 mA, IB = 050V

= 10 µA, IC = 05V

VCB = 10 V, IE = 0 0.1 µA

VCE = 10 V, IB = 0 100 µA

VCE = 10 V, IC = 2 mA 200 500 

= 10 mA, IB = 1 mA 0.06 0.30 V

VCB = 10 V, IE = −2 mA, f = 200 MHz 250 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF

ob

Publication date: May 2007 SJC00366AED

1

2SC4562G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

CE(sat)

a

C

IC / IB = 10

IC  V

hFE  I

CE

IB = 300 µA

C

VCE = 10 V

Ta = 25°C

250 µA

200 µA

150 µA

100 µA

50 µA

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

0 1.21.00.80.2 0.60.4

)

600

500

)

MHz
(

400

T

300

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector-emitter voltage VCE (V

600

500

FE

400

300

Ta = 75°C

25°C

−25°C

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = 10 V

= 25°C

T

a

)

Ta = 75°C

25°C

0.1

−25°C

Collector-emitter saturation voltage V

0.01
1 10 100 1 000

Collector current IC (mA

Cob  V

6

(pF)

ob

C

5

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

200

Forward current transfer ratio h

100

0

)

0.1 1 10 100

Collector current IC (mA

)

200

Transition frequency f

100

0

− 0.1 −1 −10 −100

Emitter current IE (mA

)

)

2

SJC00366AED