Page 1
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
+0.1
0.3
–0.0
0.15
Unit: mm
+0.10
–0.05
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
30 V
20 V
3V
15 mA
150 mW
150 °C
−55 to +150 °C
132
(0.65)
(0.65)
1.3±0.1
2.0±0.2
10˚
Marking Symbol: U
2.1±0.1
1.25±0.10 (0.425)
5˚
+0.2
–0.1
0.9
0.9±0.10 to 0.1
SMini3-G1 Package
0.2±0.1
1: Base
2: Emitter
3:Collector
EIAJ: SC-70
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base voltage (Collector open) V
CBOIC
EBOIE
Base-emitter voltage V
Forward current transfer ratio
*
h
Transition frequency f
Common-emitter reverse transfer C
capacitance
Power gain G
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank C D
h
FE
65 to 160 100 to 260
= 10 µA, IE = 030V
= 10 µA, IC = 03V
VCB = 6 V, IE = −1 mA 720 mV
BE
VCB = 6 V, IE = −1 mA 65 260
FE
VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz
T
VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF
re
VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB
P
Publication date: March 2003 SJC00142BED
1
Page 2
2SC3931
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
200
)
mW
160
(
C
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
IC V
30
Ta = 75°C
25°C
−25°C
25
)
mA
(
20
C
15
10
Collector current I
5
BE
a
VCE = 6 V
IC V
CE(sat)
CE
IB = 100 µA
I
Ta = 75°C
−25°C
Ta = 25°C
80 µA
60 µA
40 µA
20 µA
C
IC / IB = 10
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
0 18060 120
)
360
300
FE
240
180
120
Forward current transfer ratio h
60
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
Collector-emitter voltage VCE (V
V
100
)
V
(
CE(sat)
10
1
0.1
25°C
IC I
B
Base current IB (µA
hFE I
C
Ta = 75°C
25°C
−25°C
VCE = 6 V
= 25°C
T
a
)
VCE = 6 V
0
0 2.01.60.4 1.20.8
Base-emitter voltage VBE (V
fT I
1 200
1 000
)
MHz
(
800
T
600
400
Transition frequency f
200
0
− 0.1 −1 −10 −100
E
Emitter current IE (mA
2
VCB = 6 V
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
E
)
VCB = 6 V
f = 2 MHz
= 25°C
T
a
)
)
Collector current IC (mA
Zrb I
120
)
100
Ω
(
rb
80
60
40
20
Reverse transfer impedance Z
0
− 0.1 −1 −10
Emitter current IE (mA
0
0.1 1 10 100
CE
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
)
)
Collector current IC (mA
Cre V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common-emitter reverse transfer capacitance C
0
0.1 1 10 100
Collector-emitter voltage VCE (V
SJC00142BED
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2SC3931
This product complies with the RoHS Directive (EU 2002/95/EC).
Cob V
1.2
(pF)
ob
1.0
C
0.8
0.6
0.4
0.2
Collector output capacitance
(Common base, input open circuited)
0
030252051510
CB
IE = 0
f = 1 MHz
T
a
Collector-base voltage VCB (V
bie g
20
yie = gie + jb
VCE = 10 V
16
)
mS
(
ie
Input susceptance b
−2 mA
12
−1 mA
8
58
= − 0.5 mA
E
I
4
0
25
25
f = 10.7 MHz
015936 12
ie
ie
−4 mA
−7 mA
100
58
Input conductance gie (mS
= 25°C
150
100
)
GP I
VCE = 10 V
bre g
re
f = 150 MHz
E
f = 100 MHz
R
g
T
a
6 V
re
−4 mA
−1 mA
IE = −7 mA
100
= 50 Ω
= 25°C
)
10.7
58
12
10
)
dB
8
(
6
4
Noise figure NF
2
0
− 0.1 −1 −10 −100
25
)
0
)
−20
mS
(
fe
−40
−60
−80
−100
Forward transfer susceptance b
−120
0 1008020 6040
Forward transfer conductance gfe (mS
40
30
)
dB
(
P
20
Power gain G
10
0
− 0.1 −1 −10 −100
)
)
mS
(
re
Reverse transfer susceptance b
Emitter current IE (mA
0
yre = gre + jb
VCE = 10 V
−1
−2
−3
−4
−5
−6
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
Reverse transfer conductance gre (mS
NF I
VCE = 6 V, 10 V
Emitter current IE (mA
bfe g
−1 mA
100
− 0.4 mA
150
−2 mA
−4 mA
150
100
f = 150 MHz
= −7 mA
I
E
E
fe
58
100
yfe = gfe + jb
VCE = 10 V
f = 100 MHz
= 50 kΩ
R
g
= 25°C
T
a
)
10.7
58
fe
)
boe g
−4 mA
58
−2 mA
−7 mA
oe
100
yoe = goe + jb
VCE = 10 V
150
oe
)
1.2
−1 mA
1.0
)
= − 0.5 mA
E
I
mS
(
0.8
oe
0.6
0.4
Output susceptance b
0.2
25
f = 10.7 MHz
0
0 0.50.40.1 0.30.2
Output conductance goe (mS
SJC00142BED
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Page 4
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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