Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
cuited) C
and reverse transfer capacitance (Common emitter) C
ob
• Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
T
CBO
CEO
EBO
C
C
j
stg
15 V
10 V
3V
50 mA
150 mW
150 °C
−55 to +150 °C
+0.10
0.40
–0.05
3
+0.25
–0.05
+0.2
–0.3
2.8
rb
10˚
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
1.50
2
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
0 to 0.1
+0.10
0.16
–0.06
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
±0.2
0.4
Marking Symbol: 1S
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
1
Forward current transfer ratio
2
*
hFE ratio
*
Collector-emitter saturation voltage V
CEOIC
EBOIE
I
CBO
h
FE
∆h
CE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Reverse transfer capacitance C
(Common emitter)
Collector-base parameter rbb' • CCVCB = 4 V, IE = −5 mA, f = 31.9 MHz 11 ps
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Rank classification
Rank P Q
2: ∆h
*
h
FE
= h
FE
75 to 130 110 to 220
FE2 / hFE1
= 2 mA, IB = 010V
= 10 µA, IC = 03V
VCB = 10 V, IE = 01µA
VCE = 4 V, IC = 5 mA 75 220
FEhFE2
: VCE = 4 V, IC = 100 µA 0.75 1.60
h
: VCE = 4 V, IC = 5 mA
FE1
= 20 mA, IB = 4 mA 0.5 V
VCB = 4 V, IE = −5 mA, f = 200 MHz 1.4 1.9 2.5 GHz
T
VCB = 4 V, IE = 0, f = 1 MHz 1.4 pF
ob
VCB = 4 V, IE = 0, f = 1 MHz 0.45 pF
rb
Publication date: February 2003 SJC00125BED
1
2SC3130
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
200
)
mW
160
(
C
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
)
V
(
CE(sat)
100
10
1
0.1
CE(sat)
25°C
a
C
IC / IB = 10
Ta = 75°C
−25°C
IC V
hFE I
Ta = 75°C
25°C
−25°C
CE
C
Ta = 25°C
= 500 µA
I
B
400 µA
300 µA
200 µA
100 µA
VCE = 4 V
)
80
)
60
mA
(
C
40
20
Collector current I
0
012108264
)
Collector-emitter voltage VCE (V
360
300
FE
240
180
120
Forward current transfer ratio h
60
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
0 2.01.60.4 1.20.8
4
)
3
GHz
(
T
2
1
Transition frequency f
IC V
BE
VCE = 4 V
25°C
Ta = 75°C
−25°C
Base-emitter voltage VBE (V
fT I
E
VCB = 4 V
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Cob V
1.6
(pF)
ob
C
1.2
0.8
0.4
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
Collector-base voltage VCB (V
2
)
IE = 0
f = 1 MHz
= 25°C
T
a
0
0.1 1 10 100
Collector current IC (mA
)
0
− 0.1 −1 −10 −100
Emitter current IE (mA
)
)
SJC00125BED