Panasonic 2SC3063 Datasheet
Power Transistors
2SC3063
Silicon NPN triple diffusion planar type
For TV video output amplification
■ Features
•
High collector to emitter voltage V
•
Small collector output capacitance C
•
TO-126B package which requires no insulation plate for installation to the heat sink
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CEO
ob
CBO
CEO
EBO
CP
C
C
j
−55 to +150 °C
stg
300 V
300 V
7V
200 mA
100 mA
1.2 W
150 °C
φ 3.16
±0.1
0.75
+0.5
8.0
–0.1
±0.1
4.6
±0.2
123
±0.5
±0.3
11.0
3.8
±0.1
1.9
±1.0
16.0
0.5
±0.1
2.3
±0.2
TO-126B-A1 Package
0.5
±0.1
1 : Emitter
2 : Collector
3 : Base
Unit: mm
3.2
±0.2
±0.1
3.05
1.76
±0.1
■ Electrical Characteristics TC = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
V
CBO
CEO
EBO
FE
BE
CE(sat)
T
ob
IC = 10 µA, IE = 0 300 V
IC = 0.1 mA, IB = 0 300 V
IE = 10 µA, IC = 0 7 V
VCE = 50 V, IC = 5 mA 50 250
VCE = 10 V, IC = 30 mA 1.2 V
IC = 30 mA, IB = 3 mA 1.5 V
VCB = 30 V, IE = −20 mA, f = 200 MHz
70 140 MHz
VCB = 30 V, IE = 0, f = 1 MHz 2.4 pF
193
2SC3063
Power Transistors
PC T
a
1.6
)
W
(
C
1.2
0.8
0.4
Without heat sink
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
I
)
V
IC/IB=10
(
3
CE(sat)
1
0.3
TC=100˚C
0.1
–25˚C
0.03
0.01
Collector to emitter saturation voltage V
1 3 10 30 100
CE(sat)
25˚C
Collector current IC (mA
)
C
)
IC V
CE
120
TC=25˚C
100
)
mA
(
80
C
60
40
Collector current I
20
0
06010 5020 4030
IB=2.0mA
Collector to emitter voltage VCE (V
hFE I
1000
FE
300
T
=100
˚C
C
100
Forward current transfer ratio h
–25˚C
30
10
3
1
1 30010010330
C
25˚C
Collector current IC (mA
1.6mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
VCE=50V
)
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
02.01.61.20.80.4
)
Base to emitter voltage VBE (V
240
220
)
200
MHz
180
(
T
160
140
120
100
80
60
40
Transition frequency f
20
0
–1 –3 –10 –30 –100
IC V
BE
25˚C
TC=100˚C
–25˚C
fT I
E
VCB=30V
f=200MHz
T
Emitter current IE (mA
VCE=10V
=25˚C
C
)
)
Cob V
10
)
pF
(
8
ob
6
4
2
Collector output capacitance C
0
1310 30 100 300 1000
Collector to base voltage VCB (V
194
CB
IE=0
f=1MHz
=25˚C
T
C
1000
300
)
100
A
(
C
Collector current I
)
Area of safe operation (ASO)
Single pulse
=25˚C
T
I
CP
I
C
30
10
3
1
0.3
0.1
13
10 30 100 300 1000
Collector to emitter voltage VCE (V
C
t=2ms
t=1s
)
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