Panasonic 2SC2925 Datasheet

Transistor

2SC2925

Silicon NPN epitaxial planer type

For low-frequency output amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

Ratings

–55 ~ +150

.

CE(sat)

Unit

60
50
15

1.5

0.7
750
150

V
V
V
A
A

mW

˚C
˚C

Conditions

VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
IC = 500mA, IB = 50mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

60
50
15

400

1000

0.15

typ

200

11

0.45

2.3±0.2

+0.2
–0.1

Unit: mm

1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

max

Unit

1

10

2000

0.4
MHz

15

µA
µA

V
V
V

V

pF

*

hFE Rank classification

Rank R S T

h

FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

1

Transistor

2SC2925

PC — Ta IC — V

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

–25˚C

Collector current IC (A

C

IC/IB=10

Ta=75˚C

)

V

CE

120

Ta=25˚C

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

2400

FE

2000

1600

Ta=75˚C

1200

800

400

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

C

IB=100µA

90µA
80µA
70µA

60µA
50µA

40µA
30µA

20µA

10µA

VCE=10V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

– 0.001

– 0.003

Emitter current IE (A

CE(sat)

Ta=75˚C

25˚C

fT — I

– 0.01

— I

–25˚C

E

– 0.03

C

IC/IB=10

)

VCB=10V
Ta=25˚C

– 0.1 –1

– 0.3

)

Cob — V

40

)
pF

35

(

ob

30

25

20

15

10

5

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

2

f=1MHz
Ta=25˚C

)