Panasonic 2SC2778 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SC2778

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

30
20

5

30
200
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

Unit: mm

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : K

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance

*

hFE Rank classification

Rank B C

h

FE

70 ~ 160 110 ~ 250

Marking Symbol KB KC

Symbol

V

CBO

V

CEO

V

EBO

*

h

FE

f

T

C

re

Conditions

IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCE = 10V, IC = 1mA, f = 10.7MHz

min

30
20

5

70

150

typ

230

1.3

max

250

Unit

V
V
V

MHz

pF

1

Transistor

2SC2778

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

Ta=75˚C

25˚C

–25˚C

VCE=10V

CE

12

IB=100µA

10

)
mA

(

8

C

6

4

Collector current I

2

0

018612

)

)

Collector to emitter voltage VCE (V

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

— I

25˚C

Ta=25˚C

80µA

60µA

40µA

20µA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

0 18060 120

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

IC — I

B

VCE=10V
Ta=25˚C

Base current IB (µA

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

fT — I

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

VCB=10V

Emitter current IE (mA

2

E

Ta=25˚C

6V

80

)

Ω

70

(

rb

60

50

40

30

20

10

Reverse transfer impedance Z

0

– 0.1 – 0.3 –1 –3 –10

)

Zrb — I

E

f=2MHz
Ta=25˚C

VCB=6V

10V

Emitter current IE (mA

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

)

Collector to emitter voltage VCE (V

Cre — V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)