Panasonic 2SC2778 Datasheet

Transistor
2.8
+0.2 –0.3
1.5
+0.25 –0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2 0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SC2778
Silicon NPN epitaxial planer type
For high-frequency amplification
Features
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30 20
5
30 200 150
–55 ~ +150
Unit
V V V
mA
mW
˚C ˚C
Unit: mm
1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini T ype Package
Marking symbol : K
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance
*
hFE Rank classification
Rank B C
h
FE
70 ~ 160 110 ~ 250
Marking Symbol KB KC
Symbol
V
CBO
V
CEO
V
EBO
*
h
FE
f
T
C
re
Conditions
IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 1mA VCB = 10V, IE = –1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz
min
30 20
5
70
150
typ
230
1.3
max
250
Unit
V V V
MHz
pF
1
Transistor
2SC2778
PC — Ta IC — V
240
) mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IC — V
BE
60
50
) mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
Ta=75˚C
25˚C
–25˚C
VCE=10V
CE
12
IB=100µA
10
) mA
(
8
C
6
4
Collector current I
2
0
018612
)
)
Collector to emitter voltage VCE (V
V
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
Collector current IC (mA
— I
25˚C
Ta=25˚C
80µA
60µA
40µA
20µA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
12
10
) mA
(
8
C
6
4
Collector current I
2
0
0 18060 120
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
IC — I
B
VCE=10V Ta=25˚C
Base current IB (µA
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
fT — I
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
VCB=10V
Emitter current IE (mA
2
E
Ta=25˚C
6V
80
)
70
(
rb
60
50
40
30
20
10
Reverse transfer impedance Z
0
– 0.1 – 0.3 –1 –3 –10
)
Zrb — I
E
f=2MHz Ta=25˚C
VCB=6V
10V
Emitter current IE (mA
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
0.1 1 10 1000.3 3 30
)
Collector to emitter voltage VCE (V
Cre — V
CE
IC=1mA f=10.7MHz Ta=25˚C
)
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