Panasonic 2SC2671F Datasheet

Transistor

2SC2671(F)

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

Features

■

●

Low noise figure NF.

●

High gain.

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

REB = 1kΩ

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure

Second inter modulation distortion

Third inter modulation distortion

*

LTPD = 10%

Symbol

V

CBO

V

CER

V

EBO

I

C

P

C

T

j

T

stg

*

Symbol

I

CBO

I

EBO

h

FE

*

f

T

*

C

ob

| S

21e

GUM

*

NF

*

IM

2

*

IM

3

Ratings

–55 ~ +150

2

|

*

Unit

15
14

2

80
600
150

V
V
V

mA

mW

˚C
˚C

Conditions

VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 40mA
VCE = 8V, IC = 40mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f1 = 200MHz
f2 = 500MHz, VO = 100dBµ/75Ω
VCE = 8V, IC = 40mA, f1 = 600MHz
f2 = 500MHz, VO = 100dBµ/75Ω

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

50

3.5

typ

150

5.5

0.8

9

10

2.0

50

75

Unit: mm

+0.2

0.45

–0.1

1:Base

2.3±0.2

2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A

max

Unit

1

µA

1

µA

300

GHz

1.5
12
13

15

3.2

60

86

pF
dB
dB
dB

dB

dB

1

Transistor

2SC2671(F)

PC — Ta IC — V

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 24020016040 12080

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

Ta=75˚C, 25˚C, –25˚C

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

C

IC/IB=10

)

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

012108264

IB=400µA

350µA

300µA

250µA

200µA

150µA

100µA

50µA

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

VCE=8V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

12

)

10

MHz

(

T

8

6

4

2

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

VCE=8V

25˚C

Ta=75˚C –25˚C

fT — I

E

VCB=8V
f=800MHz
Ta=25˚C

Emitter current IE (mA

)

)

)
pF

(

Cob — V

2.4

2.0

ob

1.6

1.2

0.8

0.4

CB

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

GUM — I

24

)
dB

(

20

16

12

8

4

Maximum unilateral power gain GUM

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

C

VCE=8V
f=800MHz
Ta=25˚C

NF — I

C

)
dB

(

12

10

8

6

4

VCE=8V
(R

=50Ω)

g

f=800MHz
Ta=25˚C

Noise figure NF

2

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

)