Panasonic 2SC2647 Datasheet

Transistor

2SC2647

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

V

CBO

V

CEO

V

EBO

*

h

FE

f

T

C

re

Z

rb

Ratings

30
20

5

30
400
150

–55 ~ +150

IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA

Unit

V
V
V

mA

mW

˚C
˚C

Conditions

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

min

typ

2.5±0.1

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

max

30
20

5

70

150

230

1.3

250

1.6
60

Unit: mm

1.0

4.1±0.2 4.5±0.1

Unit

V
V
V

MHz

pF

Ω

*

hFE Rank classification

Rank B C

h

FE

70 ~ 160 110 ~ 250

1

Transistor 2SC2647

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

Ta=75˚C

25˚C

–25˚C

VCE=10V

CE

12

IB=100µA

10

)
mA

(

8

C

6

4

Collector current I

2

0

018612

)

)

Collector to emitter voltage VCE (V

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

— I

25˚C

Ta=25˚C

80µA

60µA

40µA

20µA

C

IC/IB=10

Ta=75˚C

–25˚C

)

120

100

)
µA

(

80

B

60

40

Base current I

20

0

01.80.6 1.2

)

Base to emitter voltage VBE (V

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

IB — V

BE

VCE=10V
Ta=25˚C

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

fT — I

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0
– 0.1 –1 –10 –100– 0.3 –3 –30

VCB=10V

Emitter current IE (mA

2

E

Ta=25˚C

6V

80

)

Ω

70

(

rb

60

50

40

30

20

10

Reverse transfer impedance Z

0

– 0.1 – 0.3 –1 –3 –10

)

Zrb — I

E

f=2MHz
Ta=25˚C

VCB=6V

Emitter current IE (mA

10V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

)

Collector to emitter voltage VCE (V

Cre — V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)