Panasonic 2SC2636 Datasheet

Transistor

2SC2636

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation

Features

■

●

High transition frequency fT.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Power gain
Common base reverse transfer capacitance
Common emitter reverse transfer capacitance
Base time constant

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

V

CBO

V

EBO

h

FE

V

BE

*

f

T

PG
C

rb

C

re

rbb' · C

Ratings

30
20

3

50
400
150

–55 ~ +150

IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –2mA
VCB = 10V, IE = –2mA
VCB = 10V, IE = –15mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 100MHz
VCB = 6V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –10mA, f = 31.9MHz

C

Unit

V
V
V

mA

mW

˚C
˚C

Conditions

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

min

typ

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

max

30

3

25

720

600

1200

1600

20

0.8

1.5
25

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Unit

V
V

mV

MHz

dB
pF
pF

ps

*

fT Rank classification

Rank T S

f

600 ~ 1300 900 ~ 1600

T

1

Transistor

2SC2636

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IB — V

BE

400

350

300

)
µA

(

250

B

200

VCE=10V
Ta=25˚C

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

018612

)

Collector to emitter voltage VCE (V

IB=300µA

IC — V

60

50

)
mA

(

C

Ta=75˚C

40

30

250µA

25˚C

Ta=25˚C

200µA

150µA

100µA

50µA

)

BE

VCE=10V

–25˚C

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

0 450150 300

)

100

V

(

30

CE(sat)

10

3

1

IC — I

B

VCE=10V
Ta=25˚C

Base current IB (µA

V

— I

CE(sat)

C

)

IC/IB=10

150

Base current I

100

50

0

01.80.6 1.2

Base to emitter voltage VBE (V

hFE — I

C

240

FE

200

160

Ta=75˚C

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

25˚C

–25˚C

VCE=10V

Collector current IC (mA

20

Collector current I

10

0

0 2.01.60.4 1.20.8

)

)

Base to emitter voltage VBE (V

fT — I

E

1600

1400

)
MHz

1200

(

T

1000

800

600

400

Transition frequency f

200

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

VCE=10V

6V

)

Ta=25˚C

)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

25˚C

Ta=75˚C

CE

–25˚C

)

IC=1mA
f=10.7MHz
Ta=25˚C

)

2