Panasonic 2SC2634 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2634

Silicon NPN epitaxial planar type

For low-frequency and low-noise amplification

Complementary to 2SA1127

■ Features

5.0

±0.2

±0.2

5.1

Unit: mm

4.0

±0.2

• Low noise voltage NV

• High forward current transfer ratio h

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

FE

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

60 V

55 V

7V

100 mA

200 mA

400 mW

150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.5

12.9

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-43A

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

CBOIC

CEOIC

EBOIE

Base-emitter voltage V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoffcurrent (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

I

CBO

I

CEO

h

CE(sat)IC

Transition frequency f

Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 mV

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

180 to 360 260 to 520 360 to 700

= 10 µA, IE = 060V

= 1 mA, IB = 055V

= 10 µA, IC = 07V

VCE = 1 V, IC = 30 mA 1 V

BE

VCB = 10 V, IE = 0 1 100 nA

VCE = 10 V, IB = 0 0.01 1.00 µA

VCE = 5 V, IC = 2 mA 180 700 

FE

= 100 mA, IB = 10 mA 0.6 V

VCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz

T

Rg = 100 kΩ, Function = FLAT

Publication date: March 2003 SJC00119BED

1

2SC2634

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

500

a

)

mW

400

(

C

300

200

100

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (°C

V

 I

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

CE(sat)

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

IC  V

hFE  I

25°C

−25°C

CE

350 µA

C

Ta = 25°C

300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

VCE = 5 V

)

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

)

400

)

300

MHz
(

T

200

100

Transition frequency f

0

−1 −10 −100

120

100

IB = 400 µA

)

mA

(

80

C

60

40

Collector current I

20

0

012108264

)

)

Collector-emitter voltage VCE (V

1 000

FE

800

600

Ta = 75°C

400

200

Forward current transfer ratio h

0

0.1 1 10 100

Collector current IC (mA

IC  V

BE

25°C

Ta = 75°C −25°C

VCE = 5 V

Base-emitter voltage VBE (V

fT  I

E

VCB = 5 V

= 25°C

T

a

Emitter current IE (mA

)

)

10

Cob  V

(pF)

ob

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

8

6

)

dB

(

4

Noise figure NF

2

0

−10 −100 −1 000

)

2

NF  I

E

VCE = 5 V
R
T

f = 100 Hz

Emitter current IE (µA

SJC00119BED

= 1 kΩ

g

= 25°C

a

1 kHz

10 kHz

)

NV  I

120

100

C

VCE = 10 V

= 80 dB

G

V

Function = FLAT

)

mV

80

(

60

40

Noise voltage NV

20

0

0.01 0.1 1

Rg = 100 kΩ

22 kΩ

5 kΩ

Collector current IC (mA

)