Panasonic 2SC2632 Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SC2632

Silicon NPN epitaxial planer type

For low-frequency high breakdown voltage amplification
Complementary to 2SA1124

Features

■

●

Satisfactory linearity of forward current transfer ratio hFE.

●

High collector to emitter voltage V

●

Small collector output capacitance Cob.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Noise voltage

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

NV

.

CEO

Ratings

–55 ~ +150

150
150

5

100

50

1

150

VCB = 100V, IE = 0
IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

Unit

V
V

V
mA
mA

W
˚C
˚C

Conditions

min

150

5

130

typ

160

150

Unit: mm

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

max

Unit

1

µA

V
V

330

1

V

MHz

3

300

pF

mV

*

hFE Rank classification

Rank R S

h

FE

130 ~ 220 185 ~ 330

1

Transistor

2SC2632

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

hFE — I

C

600

FE

500

400

300

200

Ta=75˚C

25˚C
–25˚C

VCE=10V

V

BE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

25˚C

Ta=75˚C –25˚C

fT — I

300

)

250

MHz

(

T

200

150

100

E

VCE=10V

VCB=10V
f=100MHz
Ta=25˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

5

)
pF

(

4

ob

3

2

— I

CE(sat)

Cob — V

25˚C

CB

C

IC/IB=10

Ta=75˚C

–25˚C

IE=0
f=1MHz
Ta=25˚C

)

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

50

Transition frequency f

1

Collector output capacitance C

0

–1 –3 –10 –30 –100

)

Emitter current IE (mA

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)

2