Panasonic 2SC2631 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2631

Silicon NPN epitaxial planar type

For low-frequency high breakdown voltage amplification

Complementary to 2SA1123

■ Features

• Satisfactory linearity of forward current transfer ratio h

• High collector-emitter voltage (Base open) V

CEO

• Small collector output capacitance (Common base, input open cir­cuited) C

ob

FE

0.7

±0.1

5.0

±0.2

±0.2

5.1

±0.2

0.7

±0.5

12.9

Unit: mm

4.0

±0.2

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

150 V

150 V

5V

50 mA

100 mA

750 mW

150 °C

0.45

2.5

+0.15
–0.1

+0.6
–0.2

123

2.5

+0.6
–0.2

±0.2

2.3

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-43A

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

CEOIC

EBOIE

I

CBO

h

FE

CE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Noise voltage NV V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S

h

FE

130 to 220 185 to 330

= 100 µA, IB = 0 150 V

= 10 µA, IC = 05V

VCB = 100 V, IE = 01µA

VCE = 5 V, IC = 10 mA 130 330 

= 30 mA, IB = 3 mA 1 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 160 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 3 pF

ob

= 10 V, IC = 1 mA, GV = 80 dB 150 300 mV

CE

Rg = 100 kΩ, Function = FLAT

Publication date: March 2003 SJC00117BED

1

2SC2631

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

hFE  I

600

500

FE

400

300

200

Ta = 75°C

25°C

−25°C

a

C

VCE = 10 V

IC  V

25°C

fT  I

BE

VCE = 10 V

E

VCB = 10 V
f = 200 MHz

= 25°C

T

a

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

)

5

(pF)

ob

C

4

3

2

120

100

)

mA

(

80

C

60

40

Ta = 75°C −25°C

Collector current I

20

0

0 2.01.60.4 1.20.8

)

Base-emitter voltage VBE (V

300

250

)

MHz

(

200

T

150

100

V

 I

CE(sat)

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

)

Forward current transfer ratio h

100

0

0.1 1 10 100

Collector current IC (mA

Transition frequency f

50

0

)

−1 −10 −100

Emitter current IE (mA

)

1

Collector output capacitance

(Common base, input open circuited)

0

110100

Collector-base voltage VCB (V

)

2

SJC00117BED