Panasonic 2SC2497, 2SC2497A Datasheet
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
■ Features
•
High collector to emitter voltage V
•
TO-126B package which requires no insulation plate for installation to the heat sink
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to
emitter voltage
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
Note)*1: Without heat sink
2: With a 100 × 100 × 2 mm A1 heat sink
*
2SC2497 V
2SC2497A 60
CEO
CBO
CEO
EBO
CP
C
C
j
−55 to +150 °C
stg
70 V
50 V
5V
3A
1.5 A
1
*
1.2
5
2
*
W
150 °C
φ 3.16
±0.1
0.75
+0.5
8.0
–0.1
±0.1
4.6
±0.2
123
±0.5
±0.3
11.0
3.8
±0.1
1.9
±1.0
16.0
0.5
±0.1
2.3
±0.2
TO-126B-A1 Package
0.5
±0.1
1 : Emitter
2 : Collector
3 : Base
Unit: mm
3.2
±0.2
±0.1
3.05
1.76
±0.1
■ Electrical Characteristics TC = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Collector to base voltage V
Collector to emitter
voltage
Forward current transfer ratio
2SC2497 V
2SC2497A 60
*
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Note)*: Rank classification
Rank R S
h
FE
80 to 160 120 to 220
188
V
CBO
I
CEO
EBO
CBO
CEO
h
FE
CE(sat)
BE(sat)
T
ob
VCB = 20 V, IE = 0 1 µA
VCE = 10 V, IB = 0 100 µA
VEB = 5 V, IC = 0 10 µA
IC = 1 mA, IE = 0 70 V
IC = 2 mA, IB = 0 50 V
VCE = 5 V, IC = 1 A 80 220
IC = 1.5 A, IB = 0.15 A 1 V
IC = 1.5 A, IB = 0.15 A 1.5 V
VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz
VCB = 20 V, IE = 0, f = 1 MHz 35 pF
Power Transistors
2SC2497, 2SC2497A
PC T
a
6
)
W
(
5
C
4
3
2
1
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
(1)
(2)
Collector power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
V
I
BE(sat)
)
V
(
10
BE(sat)
3
1
0.3
0.1
TC=–25˚C
100˚C
25˚C
C
IC/IB=10
)
IC V
CE
4.0
3.5
)
3.0
A
(
C
2.5
2.0
1.5
1.0
Collector current I
0.5
0
012210486
TC=25˚C
IB=50mA
45mA
40mA
35mA
30mA
25mA
Collector to emitter voltage VCE (V
1000
FE
300
100
hFE I
30
10
C
TC=100˚C
–25˚C
25˚C
20mA
15mA
10mA
5mA
VCE=5V
V
I
)
V
(
10
CE(sat)
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.03
)
240
)
200
MHz
(
T
160
120
80
CE(sat)
TC=100˚C
25˚C
0.1 0.3 1 3
Collector current IC (A
fT I
E
C
IC/IB=10
–25˚C
VCB=5V
f=200MHz
=25˚C
T
C
)
0.03
Base to emitter saturation voltage V
0.01
0.01 10.10.03 0.3
CB
)
IE=0
f=1MHz
=25˚C
T
C
Collector current IC (A
240
)
pF
(
200
ob
160
120
80
40
Cob V
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
3
Forward current transfer ratio h
3
1
0.01 310.10.03 0.3
Collector current IC (A
100
)
90
V
(
80
CER
70
60
50
40
30
20
10
Collector to emitter voltage V
0
0.1 0.3 1 3 10 30 100
)
Base to emitter resistance RBE (kΩ
40
Transition frequency f
0
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
)
V
R
CER
BE
IC=10mA
T
=25˚C
C
Emitter current IE (A
4
10
3
10
I
CBO
T
)
a
VCB=40V
)
)
a
T
(
=25˚C
a
2
10
T
(
CBO
I
CBO
I
10
1
)
Ambient temperature Ta (˚C
18014010060200 40 80 120 160
)
189
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