Panasonic 2SC2497, 2SC2497A Datasheet

Power Transistors

2SC2497, 2SC2497A

Silicon NPN epitaxial planar type

For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A

■ Features

•

High collector to emitter voltage V

•

TO-126B package which requires no insulation plate for installa­tion to the heat sink

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V

Collector to

emitter voltage

Emitter to base voltage V

Peak collector current I

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

Note)*1: Without heat sink

2: With a 100 × 100 × 2 mm A1 heat sink

*

2SC2497 V

2SC2497A 60

CEO

CBO

CEO

EBO

CP

C

C

j

−55 to +150 °C

stg

70 V

50 V

5V

3A

1.5 A

1

*

1.2

5

2

*

W

150 °C

φ 3.16

±0.1

0.75

+0.5

8.0

–0.1

±0.1

4.6

±0.2

123

±0.5

±0.3

11.0

3.8

±0.1

1.9

±1.0

16.0

0.5

±0.1

2.3

±0.2

TO-126B-A1 Package

0.5

±0.1

1 : Emitter
2 : Collector
3 : Base

Unit: mm

3.2

±0.2

±0.1

3.05

1.76

±0.1

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Emitter cutoff current I

Collector to base voltage V

Collector to emitter

voltage

Forward current transfer ratio

2SC2497 V

2SC2497A 60

*

Collector to emitter saturation voltage

Base to emitter saturation voltage V

Transition frequency f

Collector output capacitance C

Note)*: Rank classification

Rank R S

h

FE

80 to 160 120 to 220

188

V

CBO

I

CEO

EBO

CBO

CEO

h

FE

CE(sat)

BE(sat)

T

ob

VCB = 20 V, IE = 0 1 µA

VCE = 10 V, IB = 0 100 µA

VEB = 5 V, IC = 0 10 µA

IC = 1 mA, IE = 0 70 V

IC = 2 mA, IB = 0 50 V

VCE = 5 V, IC = 1 A 80 220

IC = 1.5 A, IB = 0.15 A 1 V

IC = 1.5 A, IB = 0.15 A 1.5 V

VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz

VCB = 20 V, IE = 0, f = 1 MHz 35 pF

Power Transistors

2SC2497, 2SC2497A

PC  T

a

6

)
W

(

5

C

4

3

2

1

(1)With a 100×100×2mm

Al heat sink

(2)Without heat sink

(1)

(2)

Collector power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

 I

BE(sat)

)
V

(

10

BE(sat)

3

1

0.3

0.1

TC=–25˚C

100˚C

25˚C

C

IC/IB=10

)

IC  V

CE

4.0

3.5

)

3.0

A
(

C

2.5

2.0

1.5

1.0

Collector current I

0.5

0

012210486

TC=25˚C

IB=50mA

45mA

40mA

35mA

30mA

25mA

Collector to emitter voltage VCE (V

1000

FE

300

100

hFE  I

30

10

C

TC=100˚C

–25˚C

25˚C

20mA

15mA

10mA

5mA

VCE=5V

V

 I

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.03

)

240

)

200

MHz
(

T

160

120

80

CE(sat)

TC=100˚C

25˚C

0.1 0.3 1 3

Collector current IC (A

fT  I

E

C

IC/IB=10

–25˚C

VCB=5V
f=200MHz

=25˚C

T

C

)

0.03

Base to emitter saturation voltage V

0.01

0.01 10.10.03 0.3

CB

)

IE=0
f=1MHz

=25˚C

T

C

Collector current IC (A

240

)
pF

(

200

ob

160

120

80

40

Cob  V

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

3

Forward current transfer ratio h

3

1

0.01 310.10.03 0.3

Collector current IC (A

100

)

90

V
(

80

CER

70

60

50

40

30

20

10

Collector to emitter voltage V

0

0.1 0.3 1 3 10 30 100

)

Base to emitter resistance RBE (kΩ

40

Transition frequency f

0

–0.01 –0.03 –0.1 –0.3 –1 –3 –10

)

V

 R

CER

BE

IC=10mA
T

=25˚C

C

Emitter current IE (A

4

10

3

10

I

CBO

 T

)

a

VCB=40V

)

)

a

T
(

=25˚C

a

2

10

T
(

CBO

I

CBO

I

10

1

)

Ambient temperature Ta (˚C

18014010060200 40 80 120 160

)

189