Panasonic 2SC2480 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

■ Features

• High transition frequency f

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing

T

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

30 V

20 V

3V

50 mA

150 mW

150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: R

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Base
2: Emitter
3: Collector

JEITA: SC-59A

Mini3-G1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

CBOIC

EBOIE

Base-emitter voltage V

Forward current transfer ratio h

Transition frequency

*

f

Reverse transfer capacitance C

(Common base)

Reverse transfer capacitance C

(Common emitter)

Power gain G

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank T S No-rank

f

T

800 to 1 400 1 000 to 1 600 800 to 1 600

Marking symbol RT RS R

Product of no-rank is not classified and have no indication for rank.

= 100 µA, IE = 030 V

= 10 µA, IC = 03V

VCB = 10 V, IE = −2 mA 720 mV

BE

VCB = 10 V, IE = −2 mA 25 250 

FE

VCB = 10 V, IE = −15 mA, f = 200 MHz 800 1 300 1 600 MHz

T

VCE = 6 V, IC = 0, f = 1 MHz 0.8 pF

rb

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.0 1.5 pF

re

VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB

P

0.4±0.2

Publication date: June 2006 SJC00116CED

1

2SC2480

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

200

(mW)

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

IB  V

400

350

300

250

(µA)

B

200

150

Base current I

100

50

0

0 2.01.61.20.80.4

Base-emitter voltage VBE (V)

a

BE

VCE = 10 V

= 25°C

T

a

IC  V

24

20

16

(mA)

C

12

8

CE

Ta = 25°C

IB = 300 µA

250 µA

200 µA

150 µA

Collector current I

4

0

0481216

Collector-emitter voltage VCE (V)

IC  V

60

50

40

(mA)

C

30

20

Ta = 75°C −25°C

25°C

BE

VCE = 10 V

Collector current I

10

0

0 2.01.61.20.80.4

Base-emitter voltage VBE (V)

100 µA

50 µA

IC  I

B

(mA)

C

24

20

16

12

8

Collector current I

4

0

0 500400300200100

Base current IB (µA)

hFE  I

240

200

FE

160

Ta = 75°C

120

80

Forward current transfer ratio h

40

0

0.1

25°C

−25°C

1 10 100

C

Collector current IC (mA)

VCE = 10 V

= 25°C

T

a

VCE = 10 V

V

 I

100

CE(sat)

(V)

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1

1 10 100

25°C

C

IC / IB = 10

Ta = 75°C

–25°C

1 600

1 400

1 200

(MHz)

T

1 000

800

600

400

Transition frequency f

200

0

− 0.1 −1 −10 −100

Collector current IC (mA)

2

fT  I

E

VCB = 10 V

= 25°C

T

a

Emitter current IE (mA)

SJC00116CED

Cre  V

2.4

2.0

(pF)

re

C

1.6

1.2

0.8

0.4

(Common emitter)

Reverse transfer capacitance

0

0.1 1 10 100

CE

Collector-emitter voltage VCE (V)

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a