Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
T
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
30 V
20 V
3V
50 mA
150 mW
150 °C
−55 to +150 °C
+0.10
0.40
–0.05
3
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Marking Symbol: R
+0.25
–0.05
1.50
(0.65)
+0.2
–0.1
1.1
0 to 0.1
+0.2
2.8
+0.3
–0.3
–0.1
1.1
Unit: mm
+0.10
0.16
–0.06
5˚
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base voltage (Collector open) V
CBOIC
EBOIE
Base-emitter voltage V
Forward current transfer ratio h
Transition frequency
*
f
Reverse transfer capacitance C
(Common base)
Reverse transfer capacitance C
(Common emitter)
Power gain G
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank T S No-rank
f
T
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol RT RS R
Product of no-rank is not classified and have no indication for rank.
= 100 µA, IE = 030 V
= 10 µA, IC = 03V
VCB = 10 V, IE = −2 mA 720 mV
BE
VCB = 10 V, IE = −2 mA 25 250
FE
VCB = 10 V, IE = −15 mA, f = 200 MHz 800 1 300 1 600 MHz
T
VCE = 6 V, IC = 0, f = 1 MHz 0.8 pF
rb
VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.0 1.5 pF
re
VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB
P
0.4±0.2
Publication date: June 2006 SJC00116CED
1
2SC2480
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
240
200
(mW)
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C)
IB V
400
350
300
250
(µA)
B
200
150
Base current I
100
50
0
0 2.01.61.20.80.4
Base-emitter voltage VBE (V)
a
BE
VCE = 10 V
= 25°C
T
a
IC V
24
20
16
(mA)
C
12
8
CE
Ta = 25°C
IB = 300 µA
250 µA
200 µA
150 µA
Collector current I
4
0
0481216
Collector-emitter voltage VCE (V)
IC V
60
50
40
(mA)
C
30
20
Ta = 75°C −25°C
25°C
BE
VCE = 10 V
Collector current I
10
0
0 2.01.61.20.80.4
Base-emitter voltage VBE (V)
100 µA
50 µA
IC I
B
(mA)
C
24
20
16
12
8
Collector current I
4
0
0 500400300200100
Base current IB (µA)
hFE I
240
200
FE
160
Ta = 75°C
120
80
Forward current transfer ratio h
40
0
0.1
25°C
−25°C
1 10 100
C
Collector current IC (mA)
VCE = 10 V
= 25°C
T
a
VCE = 10 V
V
I
100
CE(sat)
(V)
CE(sat)
10
1
0.1
Collector-emitter saturation voltage V
0.01
0.1
1 10 100
25°C
C
IC / IB = 10
Ta = 75°C
–25°C
1 600
1 400
1 200
(MHz)
T
1 000
800
600
400
Transition frequency f
200
0
− 0.1 −1 −10 −100
Collector current IC (mA)
2
fT I
E
VCB = 10 V
= 25°C
T
a
Emitter current IE (mA)
SJC00116CED
Cre V
2.4
2.0
(pF)
re
C
1.6
1.2
0.8
0.4
(Common emitter)
Reverse transfer capacitance
0
0.1 1 10 100
CE
Collector-emitter voltage VCE (V)
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
2SC2480
This product complies with the RoHS Directive (EU 2002/95/EC).
Zrb I
120
100
(Ω)
rb
80
60
40
20
Reverse transfer impedance Z
0
− 0.1 −1 −10
E
VCB = 10 V
f = 2 MHz
T
a
Emitter current IE (mA)
bib g
600
ib
yib = gib + jb
VCB = 10 V
500
−10
(mS)
−20
ib
−30
−40
0
IE = −2 mA
f = 900 MHz
−5 mA
Input susceptance b
−50
−60
05040302010
Input conductance gib (mS)
= 25°C
300
200
GP I
40
35
30
25
(dB)
P
20
15
Power gain G
10
5
0
− 0.1 −1 −10 −100
VCB = 10 V
f = 100 MHz
= 50 Ω
R
g
= 25°C
T
a
E
12
10
8
6
4
Noise figure NF (dB)
2
0
− 0.1 −1 −10 −100
Emitter current IE (mA)
brb g
0
ib
yrb = grb + jb
rb
VCB = 10 V
− 0.4
(mS)
rb
− 0.8
−1.2
−1.6
−2.0
Reverse transfer susceptance b
−2.4
−1.0 0− 0.2− 0.4− 0.6− 0.8
f = 900 MHz
200
300
500
600
−2 mA
IE = −5 mA
Reverse transfer conductance grb (mS)
rb
48
40
(mS)
fb
32
24
16
8
Forward transfer susceptance b
0
−60 40200−20−40
Forward transfer conductance gfb (mS)
NF I
E
Emitter current IE (mA)
bfb g
fb
yfb = gfb + jb
VCB = 10 V
= −5 mA
E
−2 mA
f = 200 MHz
I
VCB = 10 V
f = 100 MHz
= 50 kΩ
R
g
= 25°C
T
a
300
500
600
900
fb
bob g
12
yob = gob + jb
VCE = 10 V
10
(mS)
8
ob
= −2 mA
I
E
6
4
300
Output susceptance b
2
f = 200 MHz
0
0 2.01.61.20.80.4
ob
ob
−5 mA
500
900
600
Output conductance gob (mS)
SJC00116CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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