Panasonic 2SC2480 Datasheet

Transistors

2SC2480

Silicon NPN epitaxial planer type

For high-frequency amplification / oscillation / mixing

■ Features

• High transition frequency f

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

T

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

CBO

CEO

EBO

C

C

j

stg

30 V
20 V

3V

50 mA
150 mW
150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10°

1: Base JEDEC: TO-236
2: Emitter EIAJ: SC-59
3: Collector Mini Type Package

Marking Symbol: R

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

Unit: mm

+0.10

0.16

–0.06

+0.2

–0.3

2.8
5°

+0.3

–0.1

1.1

0.4±0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector to base voltage V
Emitter to base voltage V

CBO

EBO

Forward current transfer ratio h
Base to emitter voltage V
Transition frequency

Common emitter reverse transfer
capacitance

*

f
C
C

Power gain PG VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB

Note)*: Rank classification

Rank T S No-rank

fT (MHz) 800 to 1 400 1 000 to 1 600 800 to 1 600

Marking symbol RT RS R

Product of no-rank is not classified and have no indication for rank.

IC = 100 µA, IE = 030 V
IE = 10 µA, IC = 03V
VCB = 10 V, IE = −2 mA 25 250

FE

VCB = 10 V, IE = −2 mA 720 mV

BE

VCB = 10 V, IE = −15 mA, f = 200 MHz 800 1 300 1 600 MHz

T

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1 1.5 pF

re

VCE= 6 V, IC = 0, f = 1 MHz 0.8 pF

rb

1

2SC2480 Transistors

PC  T

240

200

(mW)

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

IB  V

400

350

300

250

(µA)

B

200

150

Base current I

100

50

BE

a

VCE = 10 V

= 25°C

T

a

IC  V

CE

24

20

16

(mA)

C

12

8

IB = 300 µA

250 µA

200 µA

Collector current I

4

0

0 4 8 12 162 6 10 14 18

Collector to emitter voltage VCE (V)

IC  V

60

50

40

(mA)

C

30

20

Ta = 75°C −25°C

BE

25°C

Collector current I

10

Ta = 25°C

150 µA

100 µA

50 µA

VCE = 10 V

IC  I

B

(mA)

C

24

20

16

12

8

Collector current I

4

0

0 500400300200100

Base current IB (µA)

hFE  I

240

200

FE

160

Ta = 75°C

120

80

Forward current transfer ratio h

40

25°C

−25°C

C

VCE = 10 V

= 25°C

T

a

VCE = 10 V

0

0 2.01.61.20.80.4

Base to emitter voltage VBE (V)

V

100

(V)

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 0.3

Collector current IC (mA)

2

 I

CE(sat)

1 3 10 30 100

C

IC / IB = 10

Ta = 75°C

25°C

–25°C

0

0 2.01.61.20.80.4

Base to emitter voltage VBE (V)

fT  I

1 600

1 400

1 200

(MHz)

T

1 000

800

600

400

E

VCB = 10 V

= 25°C

T

a

Transition frequency f

200

0

− 0.1 − 0.3 −1 −3 −10 −30 −100

Emitter current IE (mA)

0

0.1 0.3

1 3 10 30 100

Collector current IC (mA)

Cre  V

2.4

(pF)

re

2.0

1.6

1.2

0.8

0.4

0

Common emitter reverse transfer capacitance C

0.1 0.3 1 3 10 30 100

CE

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a

Collector to emitter voltage VCE (V)