Panasonic 2SC2406 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC2406

Silicon NPN epitaxial planar type

For low-frequency and low-noise amplification
Complementary to 2SA1035

 Features

 Low noise voltage NV
 High forward current transfer ratio h

FE

 Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

 Absolute Maximum Ratings Ta = 25°C

 Package

Code

Mini3-G1

Pin Name

1. Base

2. Emitter

3. Collector

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

55 V

55 V

5 V

50 mA

100 mA

200 mW

150

–55 to +150

°C

°C

 Marking Symbol: T

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Noise voltage

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank R S T

h

FE

Merking symbol TR TS TT

180 to 360 260 to 520 360 to 700

CBOIC

CEOIC

EBOIE

BE

CBO

CEO

h

FE

CE(sat)IC

T

NV

= 10 mA, IE = 0 55 V

= 2 mA, IB = 0 55 V

= 10 mA, IC = 0 5 V

VCE = 1 V, IC = 100 mA 0.7 1.0 V

VCB = 10 V, IE = 0 0.1

VCB = 10 V, IB = 0 1

VCE = 5 V, IC = 2 mA 180 700

= 100 mA, IB = 10 mA 0.6 V

VCB = 5 V, IE = –2 mA, f = 200 MHz 200 MHz

VCB = 10 V, IC = 1 mA, GV = 80 dB,

Rg = 100 kΩ, Function = FLAT

110 mV

mA

mA



Publication date : October 2008 SJC00422AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 16040 12080

0

240

200

160

120

80

40

Collector power dissipation P

C

(mW)

Ambient temperature Ta (°C)

2SC2406_PC-Ta

0 1284

0

160

120

40

100

140

80

20

60

Ta = 25°C

IB = 350 µA

300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

Collector current I

C

(mA)

Collector-emitter voltage VCE (V)

2SC2406_IC-VCE

0 2.01.60.4 1.20.8

0

120

100

80

60

40

20

VCE = 5 V

Ta = 75°C

−25°C

25°C

Base-emitter voltage VBE (V)

Collector current I

C

(mA)

2SC2406_IC-VBE

0.1 1 10 100

0.01

0.1

1

10

100

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current IC (mA)

2SC2406_VCE(sat)-IC

0.1 1 10 100

0

1000

800

600

400

200

VCE = 5 V

Ta = 75°C

25°C

−25°C

Forward current transfer ratio h

FE

Collector current IC (mA)

2SC2406_hFE-IC

− 0.1 −1 −10 −100

0

500

400

300

200

100

VCB = 5 V
Ta = 25°C

Transition frequency f

T

(MHz)

Emitter current IE (mA)

2SC2406_fT-IE

0.1 1 10 100

0

10

8

6

4

2

IE = 0
f = 1 MHz
Ta = 25°C

Collector-base voltage VCB (V)

2SC2406_Cob-VCB

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

1 10 100

0

160

120

40

80

IC = 1 mA
GV = 80 dB
Function = FLAT

4.7 kΩ

Rg = 100 kΩ

22 kΩ

Noise voltage NV (mV)

Collector-emitter voltage VCE (V)

2SC2406_NV-VCE

0 0.50.40.1 0.30.2

0

160

120

40

80

VCE = 5 V
Ta = 25°C

Base current IB (mA)

Collector current I

C

(mA)

2SC2406_IC-IB

2SC2406

PC  Ta IC  VCE IC  I

IC  VBE V

CE(sat)

 I

C

hFE  I

B

C

fT  IE Cob  V

2 SJC00422AED

CB

NV  V

CE