Panasonic 2SC2406 User Manual

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Page 1

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC2406

Silicon NPN epitaxial planar type

For low-frequency and low-noise ampliﬁcation Complementary to 2SA1035

 Features

 Low noise voltage NV  High forward current transfer ratio h

 Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

 Absolute Maximum Ratings Ta = 25°C

 Package

Code

Mini3-G1

Pin Name

1. Base

2. Emitter

3. Collector

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

stg

55 V

5 V

50 mA

100 mA

200 mW

150

–55 to +150

°C

 Marking Symbol: T

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Noise voltage

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classiﬁcation

Rank R S T

Merking symbol TR TS TT

180 to 360 260 to 520 360 to 700

CBOIC

CEOIC

EBOIE

CBO

CEO

CE(sat)IC

= 10 mA, IE = 0 55 V

= 2 mA, IB = 0 55 V

= 10 mA, IC = 0 5 V

VCE = 1 V, IC = 100 mA 0.7 1.0 V

VCB = 10 V, IE = 0 0.1

VCB = 10 V, IB = 0 1

VCE = 5 V, IC = 2 mA 180 700

= 100 mA, IB = 10 mA 0.6 V

VCB = 5 V, IE = –2 mA, f = 200 MHz 200 MHz

VCB = 10 V, IC = 1 mA, GV = 80 dB,

Rg = 100 kΩ, Function = FLAT

110 mV



Publication date : October 2008 SJC00422AED 1

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This product complies with the RoHS Directive (EU 2002/95/EC).

0 16040 12080

240

200

160

120

Collector power dissipation P

(mW)

Ambient temperature Ta (°C)

2SC2406_PC-Ta

0 1284

160

120

100

140

Ta = 25°C

IB = 350 µA

300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

Collector current I

(mA)

Collector-emitter voltage VCE (V)

2SC2406_IC-VCE

0 2.01.60.4 1.20.8

120

100

VCE = 5 V

Ta = 75°C

−25°C

25°C

Base-emitter voltage VBE (V)

Collector current I

(mA)

2SC2406_IC-VBE

0.1 1 10 100

0.01

0.1

100

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current IC (mA)

2SC2406_VCE(sat)-IC

0.1 1 10 100

1000

800

600

400

200

VCE = 5 V

Ta = 75°C

25°C

−25°C

Forward current transfer ratio h

Collector current IC (mA)

2SC2406_hFE-IC

− 0.1 −1 −10 −100

500

400

300

200

100

VCB = 5 V Ta = 25°C

Transition frequency f

(MHz)

Emitter current IE (mA)

2SC2406_fT-IE

0.1 1 10 100

IE = 0 f = 1 MHz Ta = 25°C

Collector-base voltage VCB (V)

2SC2406_Cob-VCB

Collector output capacitance

(Common base, input open circuited)

(pF)

1 10 100

160

120

IC = 1 mA GV = 80 dB Function = FLAT

4.7 kΩ

Rg = 100 kΩ

22 kΩ

Noise voltage NV (mV)

Collector-emitter voltage VCE (V)

2SC2406_NV-VCE

0 0.50.40.1 0.30.2

160

120

VCE = 5 V Ta = 25°C

Base current IB (mA)

Collector current I

(mA)

2SC2406_IC-IB

2SC2406

PC  Ta IC  VCE IC  I

IC  VBE V

CE(sat)

 I

hFE  I

fT  IE Cob  V

2 SJC00422AED

NV  V

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This product complies with the RoHS Directive (EU 2002/95/EC).

1 10 100

300

240

120

180

IC = 1 mA GV = 80 dB Function = RIAA

4.7 kΩ

Rg = 100 kΩ

22 kΩ

Noise voltage NV (mV)

Collector-emitter voltage VCE (V)

2SC2406_NV-VCE

0.01 0.1 1

160

120

VCE = 10 V GV = 80 dB Function = FLAT

4.7 kΩ

Rg = 100 kΩ

22 kΩ

Noise voltage NV (mV)

Collector current IC (mA)

2SC2406_NV-IC

1 10 100

160

120

VCE = 10 V GV = 80 dB Function = FLAT

0.1 mA

IC = 1 mA

0.5 mA

Noise voltage NV (mV)

Signal source resistance Rg (kΩ)

2SC2406_NV-Rg

1 10 100

300

240

120

180

VCE = 10 V GV = 80 dB Function = RIAA

0.1 mA

IC = 1 mA

0.5 mA

Noise voltage NV (mV)

Signal source resistance Rg (kΩ)

2SC2406_NV-Rg

0.01 0.1 1

300

240

120

180

VCE = 10 V GV = 80 dB Function = RIAA

4.7 kΩ

Rg = 100 kΩ

22 kΩ

Noise voltage NV (mV)

Collector current IC (mA)

2SC2406_NV-IC

2SC2406

NV  VCE NV  IC NV  I

NV  Rg NV  R

SJC00422AED 3

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This product complies with the RoHS Directive (EU 2002/95/EC).

Mini3-G1 Unit: mm

(0.95)

1.9 ±0.1

0.40

1.50

2.8

2.90

0.4 ±0.2

0.16

1.1

0 to 0.1

(0.65)

+0.10

−0.05

+0.25

−0.05

+0.2

−0.3

+0.20

−0.05

+0.2

−0.1

+0.3

−0.1

+0.10

−0.05

2SC2406

4 SJC00422AED

Page 5

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

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