Panasonic 2SC2406, 2SC2405 Datasheet

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

Transistor

2SC2405, 2SC2406

Silicon NPN epitaxial planer type

For low-frequency and low-noise amplification
Complementary to 2SA1034 and 2SA1035

Features

■

●

Low noise voltage NV.

●

High foward current transfer ratio hFE.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Marking

Rank R S T

h

FE

Symbol

2SC2405
2SC2406
2SC2405
2SC2406

2SC2405 SR SS ST
2SC2406 TR TS TT

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

35
55
35
55

5

100

50
200
150

–55 ~ +150

Symbol

I

CBO

I

CEO

2SC2405
2SC2406
2SC2405
2SC2406

V

V

V
h

FE

V
V
f

T

CBO

CEO

EBO

*

CE(sat)

BE

NV

180 ~ 360 260 ~ 520 360 ~ 700

Unit

V

V

V
mA
mA

mW

˚C

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : S

˚C

Conditions

VCB = 10V, IE = 0
VCE = 10V, IB = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0
VCB = 5V, IE = –2mA
IC = 100mA, IB = 10mA
VCE = 1V, IC = 100mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

min

35
55
35
55

5

180

(2SC2405)

(2SC2406)

T

typ

0.7
200

110

max

100

1

700

0.6
1

Unit: mm

Unit

nA
µA

V

V

V

V
V

MHz

mV

1

Transistor

2SC2405, 2SC2406

PC — Ta IC — V

250

)

225

mW

(

200

C

175

150

125

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

Ta=75˚C

25˚C

–25˚C

VCE=5V

CE

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

02

0

012108264

)

)

Collector to emitter voltage VCE (V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

V

IB=350µA

CE(sat)

— I

25˚C

Ta=25˚C

300µA

250µA

200µA

150µA

100µA

50µA

C

IC/IB=10

Ta=75˚C

–25˚C

)

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

00.50.40.1 0.30.2

)

1000

900

FE

800

700

600

500

400

300

200

Forward current transfer ratio h

100

0

0.1 1 10 1000.3 3 30

IC — I

B

VCE=5V
Ta=25˚C

Base current IB (mA

hFE — I

C

VCE=5V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

fT — I

500

450

)

400

MHz

(

350

T

300

250

200

150

100

Transition frequency f

50

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

2

E

VCB=5V
Ta=25˚C

)

10

)

9

pF

(

8

ob

7

6

5

4

3

2

1

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

Cob — V

CB

IE=0
f=1MHz
Ta=25˚C

)
mV

(

Noise voltage NV

)

160

140

120

100

80

60

40

20

0

Collector to emitter voltage VCE (V

NV — V

Rg=100kΩ

1 3 10 30 100

22kΩ

4.7kΩ

CE

IC=1mA

=80dB

G

V

Function=FLAT

)