Panasonic 2SC2404 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2404

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

0.40

3

+0.10
–0.05

0.16

Unit: mm

+0.10
–0.06

• Optimum for RF amplification of FM/AM radios

+0.25

–0.05

+0.2

• High transition frequency f

T

• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

30 V

20 V

3V

15 mA

150 mW

150 °C

−55 to +150 °C

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: U

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

2.8

+0.3

–0.3

–0.1

1.1

5˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

CBOIC

EBOIE

Base-emitter voltage V

Forward current transfer ratio

*

h

Transition frequency f

Reverse transfer capacitance C

(Common emitter)

Power gain G

Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank C D

h

FE

65 to 160 100 to 260

= 10 µA, IE = 030V

= 10 µA, IC = 03V

VCB = 6 V, IE = −1 mA 0.72 V

BE

VCB = 6 V, IE = −1 mA 65 260 

FE

VCB = 6 V, IE = −1 mA, f = 100 MHz 450 650 MHz

T

VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF

re

VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB

P

0.4±0.2

Publication date: March 2003 SJC00114BED

1

2SC2404

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IC  V

30

Ta = 75°C

25°C

−25°C

25

)

mA
(

20

C

15

10

Collector current I

5

a

BE

)

VCE = 6 V

IC  V

12

10

)

mA

(

8

C

6

4

Collector current I

2

0

048 1612

Collector-emitter voltage VCE (V

V

CE(sat)

25°C

−25°C

)
V

(

CE(sat)

100

10

1

0.1

CE

IB = 100 µA

 I

Ta = 75°C

Ta = 25°C

80 µA

60 µA

40 µA

20 µA

C

IC / IB = 10

12

10

)

mA
(

8

C

6

4

Collector current I

2

0

04080 160120

)

360

300

FE

240

180

120

Forward current transfer ratio h

60

IC  I

B

Base current IB (µA

hFE  I

C

Ta = 75°C

25°C

−25°C

VCE = 6 V

= 25°C

T

a

)

VCE = 6 V

0

0 2.01.60.4 1.20.8

Base-emitter voltage VBE (V

fT  I

1 200

1 000

)

MHz
(

800

T

600

400

Transition frequency f

200

0

− 0.1 −1 −10 −100

E

Emitter current IE (mA

2

VCB = 6 V

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

)

0.1 1 10 100

Collector current IC (mA

Cre  V

2.4

2.0

(pF)

re

C

1.6

1.2

0.8

0.4

(Common emitter)

Reverse transfer capacitance

0

0.1 1 10 100

CE

Collector-emitter voltage VCE (V

)

IC = 1 mA
f = 10.7 MHz

= 25°C

T

a

)

0

0.1 1 10 100

Collector current IC (mA

Cob  V

1.2

(pF)

ob

C

1.0

0.8

0.6

0.4

0.2

Collector output capacitance

(Common base, input open circuited)

0

030252051510

CB

IE = 0
f = 1 MHz
T

a

Collector-base voltage VCB (V

)

= 25°C

)

SJC00114BED