Panasonic 2SC2377 Datasheet
Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
Features
■
●
Optimum for RF amplification of FM/AM radios.
●
High transition frequency fT.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
I
EBO
*
h
FE
V
BE
f
T
NF
PG
C
re
Ratings
30
20
3
15
400
150
–55 ~ +150
VCB = 10V, IE = 0
VCE = 20V, IB = 0
VEB = 3V, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCE = 6V, IC = 1mA
Unit
V
V
V
mA
mW
˚C
˚C
Conditions
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
min
typ
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
max
100
10
1
65
260
720
450
20
650
3.3
24
0.8
5
1
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Unit
nA
µA
µA
mV
MHz
dB
dB
pF
*
hFE Rank classification
Rank C D
h
FE
65 ~ 160 100 ~ 260
1
Transistor
2SC2377
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IC — V
BE
30
Ta=75˚C
25˚C
–25˚C
25
)
mA
(
20
C
15
10
Collector current I
5
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
VCE=6V
CE
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
)
Collector to emitter voltage VCE (V
V
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
— I
Ta=75˚C
–25˚C
Ta=25˚C
IB=100µA
80µA
60µA
40µA
20µA
)
C
IC/IB=10
)
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
0 18060 120
360
FE
300
240
180
120
60
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
IC — I
B
Ta=25˚C
VCE=10V
6V
Base current IB (µA
hFE — I
C
VCE=6V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
fT — I
1200
)
1000
MHz
(
T
800
600
400
200
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Emitter current IE (mA
2
E
VCB=10V
6V
Ta=25˚C
)
Zrb — I
E
120
)
Ω
(
100
rb
80
60
40
20
VCE=6V
Reverse transfer impedance Z
0
– 0.1 – 0.3 –1 –3 –10
Emitter current IE (mA
f=2MHz
Ta=25˚C
10V
)
Cre — V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
0.1 1 10 1000.3 3 30
Collector to emitter voltage VCE (V
CE
IC=1mA
f=10.7MHz
Ta=25˚C
)
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