Panasonic 2SC2295 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2295

Silicon NPN epitaxial planar type

For high-frequency amplification

Complementary to 2SA1022

■ Features

• Optimum for RF amplification of FM/AM radios

• High transition frequency f

T

• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

30 V

20 V

5V

30 mA

200 mW

150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: V

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

*

Transition frequency f

Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB

Reverse transfer impedance Z

Reverse transfer capacitance C

(Common emitter)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank B C

h

FE

70 to 140 110 to 220

I

VCB = 10 V, IE = 0 0.1 µA

CBO

h

VCB = 10 V, IE = −1 mA 70 220 

FE

VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz

T

VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω

rb

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF

re

0.4±0.2

Publication date: March 2003 SJC00112BED

1

2SC2295

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IB  V

120

100

)

80

µA

(

B

60

40

Base current I

20

a

BE

)

VCE = 10 V

= 25°C

T

a

IC  V

12

10

IB = 100 µA

)

mA

(

8

C

6

4

Collector current I

2

0

018612

Collector-emitter voltage VCE (V

IC  V

60

50

)

mA

(

40

C

30

20

Collector current I

10

Ta = 75°C

25°C

−25°C

CE

BE

Ta = 25°C

80 µA

60 µA

40 µA

20 µA

VCE = 10 V

)

15.0

12.5

)

mA
(

10.0

C

7.5

5.0

Collector current I

2.5

0

0 1008020 6040

Base current IB (µA

100

)
V

(

CE(sat)

10

1

0.1

V

IC  I

CE(sat)

 I

25°C

B

C

IC / IB = 10

Ta = 75°C

VCE = 10 V

= 25°C

T

a

)

−25°C

0

0 1.00.80.2 0.60.4

Base-emitter voltage VBE (V

hFE  I

240

200

FE

160

120

80

Forward current transfer ratio h

40

0

0.1 1 10 100

Ta = 75°C

25°C

−25°C

Collector current IC (mA

2

C

VCE = 10 V

0

0 2.01.60.4 1.20.8

)

Base-emitter voltage VBE (V

fT  I

400

E

)

)

300

MHz

(

T

200

100

Transition frequency f

0

− 0.1 −1 −10 −100

)

Emitter current IE (mA

VCB = 10 V
f = 100 MHz

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Zrb  I

60

)

50

Ω

(

rb

40

30

20

10

Reverse transfer impedance Z

0

− 0.1 −1 −10

E

VCB = 10 V
f = 2 MHz
T

a

= 25°C

Emitter current IE (mA

)

)

SJC00112BED