Panasonic 2SC1980 Datasheet

Transistor

2SC1980

Silicon NPN epitaxial planer type

For high breakdown voltage low-noise amplification
Complementary to 2SA921

Features

■

●

High collector to emitter voltage V

●

Low noise voltage NV.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

Noise voltage

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

NV

.

CEO

Ratings

–55 ~ +150

Unit

120
120

7
50
20

250
150

V
V

V
mA
mA

mW

˚C
˚C

Conditions

VCB = 50V, IE = 0
VCE = 50V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
IC = 20mA, IB = 2mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 40V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

typ

120
120

7

180

200

+0.2

0.45

–0.1

1:Emitter

2.3±0.2

2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

max

0.1
1

700

0.6

150

Unit: mm

Unit

µA
µA

V
V
V

V

MHz

mV

*

hFE Rank classification

Rank R S T

h

FE

180 ~ 360 260 ~ 520 360 ~ 700

1

Transistor 2SC1980

PC — Ta IC — V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Ta=75˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=10

)

CE

24

20

)

mA

(

16

C

12

8

Collector current I

4

0

012108264

Collector to emitter voltage VCE (V

hFE — I

C

1200

FE

1000

800

600

400

200

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

VCE=10V

Collector current IC (mA

Ta=25˚C

IB=50µA

45µA
40µA

35µA
30µA
25µA
20µA
15µA
10µA

5µA

)

60

50

)

mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

800

700

)

MHz

600

(

T

500

400

300

200

Transition frequency f

100

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

VCE=10V

25˚C

Ta=75˚C –25˚C

fT — I

E

VCB=5V
Ta=25˚C

Emitter current IE (mA

)

)

Cob — V

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

mV

(

Noise voltage NV

)

NV — I

C

160

140

120

100

80

60

40

20

0

0.01 0.03 0.1 0.3 1

VCE=10V

=80dB

G

V

Function=FLAT

Rg=100kΩ

22kΩ

4.7kΩ

Collector current IC (mA

)