Panasonic 2SC1847 Diagram
Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0886
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SA0886
• TO-126B package which requires no insulation plate for installation to the heat sink
φ 3.16
±0.1
8.0
+0.5
–0.1
±0.3
3.8
±0.1
1.9
±0.5
11.0
±1.0
16.0
Unit: mm
3.2
±0.2
±0.1
3.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
50 V
40 V
5V
1.5 A
3A
1.2 W
150 °C
0.75
±0.1
4.6
±0.2
123
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
h
FE
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE
80 to 160 120 to 220
= 1 mA, IE = 050V
= 2 mA, IB = 040V
VCB = 20 V, IE = 01µA
VCE = 10 V, IB = 0 100 µA
VEB = 5 V, IC = 010µA
VCE = 5 V, IC = 1 A 80 220
= 2 A, IB = 0.2 A 1 V
= 2 A, IB = 0.2 A 1.5 V
VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz
T
VCB = 20 V, IE = 0, f = 1 MHz 35 pF
ob
Publication date: February 2003 SJD00095BED
1
2SC1847
PC T
1.6
)
W
(
C
1.2
0.8
0.4
a
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
(V)
BE(sat)
BE(sat)
10
1
0.1
TC=–25˚C
C
100˚C
25˚C
Base-emitter saturation voltage V
0.01
0.01 10.1
Collector current IC (A)
IC/IB=10
IC V
hFE I
TC=100˚C
25˚C
–25˚C
CE
IB=40mA
35mA
C
TC=25˚C
30mA
25mA
20mA
VCE=5V
15mA
10mA
5mA
1
(V)
CE(sat)
0.1
0.01
Collector-emitter saturation voltage V
0.001
0.01
240
200
(MHz)
160
T
120
80
Transition frequency f
40
0
−0.01 −0.1 −1 −10
4.0
3.5
3.0
(A)
C
2.5
2.0
1.5
Collector current I
1.0
0.5
0
01024 86
)
Collector-emitter voltage VCE (V)
1000
FE
100
10
Forward current transfer ratio h
1
0.01 10.1
Collector current IC (A)
V
I
CE(sat)
25˚C
0.1 1
C
TC=100˚C
–25˚C
Collector current IC (A)
fT I
E
VCB=5V
f=200MHz
T
=25˚C
C
Emitter current IE (A)
IC/IB=10
Cob V
120
(pF)
ob
100
C
80
60
40
20
Collector output capacitance
(Common base, input open circuited)
0
1
CB
10 100
Collector-base voltage VCB (V)
2
IE=0
f=1MHz
T
=25˚C
C
V
R
60
50
(V)
CER
V
40
30
20
10
Collector-emitter voltage
(Resistor between B and E)
0
0.001 0.01 0.1 1 10
CER
BE
Base-emitter resistance RBE (kΩ)
SJD00095BED
TC=25˚C
)
T
(
I
a
CBO
1000
I
)
100
= 25°C
a
T
(
CBO
I
10
1
0 10080604020
Ambient temperature Ta (°C)
CBO
T
a
VCB=20V
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