Panasonic 2SC1846 Diagram

Power Transistors

2SC1846

Silicon NPN epitaxial planar type

For medium output power amplification
Complementary to 2SA0885

■ Features

• Low collector-emitter saturation voltage V

• Output of 3 W can be obtained by a complementary pair with

2SA0885

• TO-126B package which requires no insulation plate for installa­tion to the heat sink

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

CBO

CEO

EBO

C

CP

C

Junction temperature T

Storage temperature T

stg

Note)*: With a 100 × 100 × 2 mm Al heat sink

j

45 V

35 V

5V

1A

1.5 A

1.2 W

*

5.0

150 °C

−55 to +150 °C

φ 3.16

±0.1

0.75

+0.5

8.0

–0.1

±0.1

4.6

±0.2

123

±0.5

±0.3

11.0

3.8

±0.1

1.9

±1.0

16.0

0.5

±0.1

0.5

2.3

±0.2

TO-126B-A1 Package

±0.1

1: Emitter
2: Collector
3: Base

Unit: mm

3.2

±0.2

±0.1

3.05

1.76

±0.1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

CBOIC

CEOIC

I

CBO

I

CEO

I

EBO

FE1

h

FE2

CE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S

h

FE1

Publication date: February 2003 SJD00094BED

85 to 170 120 to 240 170 to 340

= 1 mA, IE = 045V

= 2 mA, IB = 035V

VCB = 20 V, IE = 0 0.1 µA

VCE = 20 V, IB = 0 100 µA

VEB = 5 V, IC = 010µA

*

VCE = 10 V, IC = 500 mA 85 340 

VCE = 5 V, IC = 1 A 50

= 500 mA, IB = 50 mA 0.5 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 20 pF

ob

1

2SC1846

6

)

5

W
(

C

4

3

2

1

Collector power dissipation P

0

0 20040 80 160120

)
V

(

1

CE(sat)

0.1

(1)With a 100×100×2mm

Al heat sink

(2)Without heat sink

(1)

(2)

Ambient temperature Ta (°C

V

 I

CE(sat)

TC=100˚C

25˚C

PC  T

a

1.50

1.25

)
A

(

1.00

C

0.75

0.50

Collector current I

0.25

0

01024 86

)

C

IC/IB=10

–25˚C

Collector-emitter voltage VCE (V

)

10

V

(

BE(sat)

1

IC  V

V

BE(sat)

TC=–25˚C

25˚C

100˚C

CE

 I

TC=25˚C

IB=10mA

C

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

IC/IB=10

1.2

VCE=10V
Ta=25˚C

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

)

012210486

1000

FE

100

IC  I

B

Base current IB (mA

hFE  I

C

TC=100˚C

25˚C

–25˚C

)

VCE=10V

0.01

Collector-emitter saturation voltage V

0.001

0.01

0.1 1

Collector current IC (A

fT  I

200

VCB=10V
f=200MHz
T

=25˚C

C

)

160

MHz
(

T

120

80

40

Transition frequency f

0

−1 −10 −100

E

Emitter current IE (mA

0.1

10

Forward current transfer ratio h

Base-emitter saturation voltage V

0.01

0.01 10.1

)

Collector current IC (A

Cob  V

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

)

Collector-base voltage VCB (V

CB

)

IE=0
f=1MHz
T

=25˚C

C

)

1

0.01 10.1

Collector current IC (A

V

 R

100

(V)

80

CER

V

60

40

20

Collector-emitter voltage

(Resistor between B and E)

0

0.1 1 10 100

CER

Base-emitter resistance RBE (kΩ

BE

)

IC=10mA
T

=25˚C

C

)

2

SJD00094BED