Panasonic 2SC1573B, 2SC1573A, 2SC1573 Datasheet
Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA879
Features
■
●
High collector to emitter voltage V
●
High transition frequency fT.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
250
300
400
200
300
400
7
100
70
1
150
Unit
V
V
V
mA
mA
W
˚C
˚C
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output
capacitance
*
hFE Rank classification
Rank P Q R
h
FE
*2SC1573 for Ranks Q and R only
30 ~ 100 60 ~ 150 100 ~ 220
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
Symbol
I
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = 12V, IE = 0
IC = 100µA, IB = 0
IE = 1µA, IC = 0
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
200
300
400
5
7
30
50
typ
80
max
Unit
2
µA
V
V
220
1.2
V
MHz
5
4
10
8
pF
1
Transistor
2SC1573, 2SC1573A, 2SC1573B
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IC — I
B
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
Base current IB (mA
VCE=10V
Ta=25˚C
)
Ta=75˚C
IC — V
25˚C
–25˚C
IB — V
BE
BE
VCE=10V
VCE=10V
Ta=25˚C
)
)
CE
120
100
)
mA
(
80
0.8mA
C
60
40
Collector current I
20
0
0108264
)
Collector to emitter voltage VCE (V
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
Collector current IC (mA
1.2mA
1.0mA
1.4mA
V
1.6mA
CE(sat)
1.8mA
— I
25˚C
Ta=25˚C
IB=2mA
0.6mA
0.4mA
0.2mA
C
IC/IB=10
Ta=75˚C
–25˚C
)
120
100
)
mA
(
C
Collector current I
)
)
mA
(
B
Base current I
80
60
40
20
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
3.0
2.5
2.0
1.5
1.0
0.5
0
01.00.80.2 0.60.4
Base to emitter voltage VBE (V
hFE — I
C
360
FE
300
240
180
120
60
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
2
VCE=10V
fT — I
E
160
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
–1 –3 –10 –30 –100
)
Emitter current IE (mA
VCB=10V
Ta=25˚C
)
10
)
9
pF
(
8
ob
7
6
5
4
3
2
1
Collector output capacitance C
0
Collector to base voltage VCB (V
Cob — V
1 3 10 30 100
CB
IE=0
f=1MHz
Ta=25˚C
)
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