Panasonic 2SC1573, 2SC1573A, 2SC1573B Diagram

Transistors

2SC1573, 2SC1573A, 2SC1573B

Silicon NPN triple diffusion planar type

For high breakdown voltage general amplification

For small TV video output

Complementary to 2SC1573 and 2SA0879

■ Features

• High collector-emitter voltage (Base open) V

• High transition frequency f

T

CEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

2SC1573 V

2SC1573A

2SC1573B

Collector-emitter voltage

(Base open)

2SC1573 V

2SC1573A

2SC1573B

Emitter-base voltage

(Collector open)

2SC1573 V

2SC1573A

2SC1573B

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

250 V

300

400

200 V

300

400

5V

7

70 mA

100 mA

1W

150 °C

−55 to +150 °C

0.7

±0.1

0.45

5.9

132

+0.2
–0.1

±0.2

(1.27)(1.27)

2.54

+0.3

0.7

–0.2

±0.2

8.6

±0.5

13.5

(3.2)

±0.15

Unit: mm

4.9

±0.2

+0.2

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-51

TO-92L-A1 Package

Publication date: November 2002 SJC00108BED

1

2SC1573, 2SC1573A, 2SC1573B

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage

(Base open)

2SC1573 V

2SC1573A

CEOIC

2SC1573B

Emitter-base voltage

(Collector open)

2SC1573 V

2SC1573A

EBOIE

2SC1573B

Collector-base cut-off current

(Emitter open)

2SC1573 I

2SC1573A

CBO

2SC1573B

Forward current transfer ratio 2SC1573 hFE *VCE = 10 V, IC = 5 mA 60 220 

2SC1573A

2SC1573B

Collector-emitter saturation voltage V

CE(sat)IC

Transition frequency f

Collector output capacitance

(Common base, input

open circuited)

2SC1573 C

2SC1573A

2SC1573B

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification (2SC1573 for ranks Q and R only)

Rank P Q R

h

FE

30 to 100 60 to 150 100 to 220

= 100 µA, IB = 0 200 V

300

400

= 1 µA, IC = 05V

7

7

VCB = 12 V, IE = 02µA

VCB = 200 V, IE = 010

30 220

= 50 mA, IB = 5 mA 1.2 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 5 10 pF

ob

48

48

PC  T

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

2

a

)

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0108264

Collector-emitter voltage VCE (V

IC  V

1.6 mA

1.4 mA

1.2 mA

1.0 mA

0.8 mA

SJC00108BED

1.8 mA

CE

= 25°C

T

a

IB = 2 mA

0.6 mA

0.4 mA

0.2 mA

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

)

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

Base-emitter voltage VBE (V

−25°C

)