Panasonic 2SC1573, 2SC1573A, 2SC1573B Diagram
Transistors
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA0879
■ Features
• High collector-emitter voltage (Base open) V
• High transition frequency f
T
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
2SC1573 V
2SC1573A
2SC1573B
Collector-emitter voltage
(Base open)
2SC1573 V
2SC1573A
2SC1573B
Emitter-base voltage
(Collector open)
2SC1573 V
2SC1573A
2SC1573B
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
250 V
300
400
200 V
300
400
5V
7
70 mA
100 mA
1W
150 °C
−55 to +150 °C
0.7
±0.1
0.45
5.9
132
+0.2
–0.1
±0.2
(1.27)(1.27)
2.54
+0.3
0.7
–0.2
±0.2
8.6
±0.5
13.5
(3.2)
±0.15
Unit: mm
4.9
±0.2
+0.2
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Publication date: November 2002 SJC00108BED
1
2SC1573, 2SC1573A, 2SC1573B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SC1573 V
2SC1573A
CEOIC
2SC1573B
Emitter-base voltage
(Collector open)
2SC1573 V
2SC1573A
EBOIE
2SC1573B
Collector-base cut-off current
(Emitter open)
2SC1573 I
2SC1573A
CBO
2SC1573B
Forward current transfer ratio 2SC1573 hFE *VCE = 10 V, IC = 5 mA 60 220
2SC1573A
2SC1573B
Collector-emitter saturation voltage V
CE(sat)IC
Transition frequency f
Collector output capacitance
(Common base, input
open circuited)
2SC1573 C
2SC1573A
2SC1573B
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification (2SC1573 for ranks Q and R only)
Rank P Q R
h
FE
30 to 100 60 to 150 100 to 220
= 100 µA, IB = 0 200 V
300
400
= 1 µA, IC = 05V
7
7
VCB = 12 V, IE = 02µA
VCB = 200 V, IE = 010
30 220
= 50 mA, IB = 5 mA 1.2 V
VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 5 10 pF
ob
48
48
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
2
a
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0108264
Collector-emitter voltage VCE (V
IC V
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
SJC00108BED
1.8 mA
CE
= 25°C
T
a
IB = 2 mA
0.6 mA
0.4 mA
0.2 mA
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0 2.01.60.4 1.20.8
)
IC V
BE
VCE = 10 V
25°C
Ta = 75°C
Base-emitter voltage VBE (V
−25°C
)
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