Panasonic 2SC1568 Diagram

Power Transistors

2SC1568

Silicon NPN epitaxial planar type

For low-voltage type medium output power amplification
Complementary to 2SA0900

■ Features

• Low collector-emitter saturation voltage V

• Satisfactory operation performances and high efficiency with a low-

voltage power supply

• TO-126B package which incorporates a unique construction en­abling installation to the heat sink without using insulation parts

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

18 V

18 V

5V

1A

2A

1.2 W

150 °C

−55 to +150 °C

φ 3.16

±0.1

0.75

+0.5

8.0

–0.1

±0.1

4.6

±0.2

123

±0.5

±0.3

11.0

3.8

±0.1

1.9

±1.0

16.0

0.5

±0.1

0.5

2.3

±0.2

TO-126B-A1 Package

±0.1

1: Emitter
2: Collector
3: Base

Unit: mm

3.2

±0.2

±0.1

3.05

1.76

±0.1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S

h

FE1

Publication date: January 2003 SJD00093BED

90 to 155 130 to 210 180 to 280

= 10 µA, IE = 018V

= 1 mA, IB = 018V

= 10 µA, IC = 05V

VCB = 10 V, IE = 01µA

VCE = 18 V, IB = 010µA

*

VCE = 2 V, IC = 500 mA 90 280 

VCE = 2 V, IC = 1.5 A 50 100

= 1 A, IB = 50 mA 0.5 V

= 500 mA, IB = 50 mA 1.2 V

VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz

T

VCB = 6 V, IE = 0, f = 1 MHz 12 pF

ob

1

2SC1568

6

)

5

W
(

C

4

3

2

1

Collector power dissipation P

0

0 20040 80 160120

)
V

(

10

CE(sat)

1

0.1

(1)With a 100×100×2mm

Al heat sink

(2)Without heat sink

Class B push pull

(1)

(2)

Ambient temperature Ta (°C

V

 I

CE(sat)

TC=100˚C

25˚C

PC  T

a

C

–25˚C

)

IC/IB=20

IC  V

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0 2.00.4 0.8 1.61.2

Collector-emitter voltage VCE (V

)

10

V
(

BE(sat)

1

0.1

V

IB=5.0mA

4.5mA

BE(sat)

TC=100˚C

25˚C

CE

4.0mA

3.5mA

 I

–25˚C

3.0mA

2.5mA

C

TC=25˚C

2.0mA

1.5mA

1.0mA

0.5mA

IC/IB=10

IC  I

B

VCE=2V
T

=25˚C

C

(A)

C

1.2

1.0

0.8

0.6

0.4

Collector current I

0.2

0

012210486

)

1000

FE

100

Base current IB (mA)

10

hFE  I

TC=100˚C

–25˚C

25˚C

C

VCE=2V

Collector-emitter saturation voltage V

0.01

0.01

0.1 1

Collector current IC (A

fT  I

200

)

150

MHz
(

T

100

50

E

VCB=6V
f=200MHz
T

=25˚C

C

Transition frequency f

0

−1 −10 −100

Emitter current IE (mA

Forward current transfer ratio h

Base-emitter saturation voltage V

0.01

0.01 10.1

CB

)

IE=0
f=1MHz
T

=25˚C

C

)

Collector current IC (A

Cob  V

50

(pF)

ob

C

40

1

0.01 10.1

Collector current IC (A

4

10

3

10

I

CBO

 T

)

a

VCB=10V

)

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

)

Collector-base voltage VCB (V

)

a

T
(

= 25°C

2

a

10

T
(

CBO

I

CBO

I

10

1

0 16040 12080

)

Ambient temperature Ta (°C

)

2

SJD00093BED