Panasonic 2SC1518 Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SC1518

Silicon NPN epitaxial planer type

For high-frequency bias oscillation of tape recorders
For DC-DC converter

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory operation performances and high efficiency with a
low-voltage power supply.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

25
20

1.5

150

–55 ~ +150

5

1
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

Unit: mm

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Rank Q R S

h

FE1

90 ~ 155 130 ~ 220 185 ~ 330

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

BE(sat)

V

CE(sat)

f

T

C

ob

Conditions

VCB = 25V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
IC = 500mA, IB = 50mA
IC = 1A, IB = 50mA

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

25
20

5
90
50

typ

max

100

330

100

1.2

0.5

150

12

20

*2

Pulse measurement

Unit

nA

1

µA

V
V
V

V
V

MHz

pF

1

Transistor 2SC1518

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — I

B

1.0

0.9

0.8

)
A

(

0.7

C

0.6

0.5

0.4

0.3

Collector current I

0.2

0.1

0

054132

Base current IB (mA

VCE=2V
Ta=25˚C

)

V

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

Collector to emitter voltage VCE (V

V

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

— I

Ta=–25˚C

75˚C

Ta=25˚C

IB=5.0mA

4.5mA

4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

C

IC/IB=10

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

1.6

1.4

)

1.2

A

(

C

1.0

0.8

0.6

0.4

Collector current I

0.2

0

01.00.80.2 0.60.4

Base to emitter saturation voltage V

CE(sat)

25˚C

IC — V

— I

Ta=75˚C

–25˚C

BE(sat)

C

IC/IB=20

IC/IB=20

)

Ta=25˚C

BE(sat)

10

)

(V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

Ta=75˚C

25˚C
–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

2

VCE=2V

)

fT — I

E

200

180

)

160

MHz

(

140

T

120

100

80

60

40

Transition frequency f

20

0

–1 –3 –10 –30 –100

Emitter current IE (mA

VCB=10V
Ta=25˚C

)

Cob — V

50

)

45

pF

(

40

ob

35

30

25

20

15

10

5

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

)