Panasonic 2SC1509 Service Manual

Transistors

2SC1509

Silicon NPN epitaxial planar type

For low-frequency driver amplification

Complementary to 2SA0777 (2SA777)

■ Features

• High collector-emitter voltage (Base open) V

• Optimum for the driver stage of a low-frequency and 25 W to 30

W output amplifier

CEO

■ Absolute Maximum Ratings Ta = 25°C

0.7

±0.1

5.9

±0.2

+0.3

±0.2

8.6

–0.2

0.7

±0.5

13.5

4.9

Unit: mm

±0.2

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

80 V

80 V

5V

0.5 A

1A

750 mW

150 °C

0.45

+0.2
–0.1

132

(1.27)(1.27)

2.54

+0.2

0.45

–0.1

(3.2)

±0.15

TO-92L-A1 Package

1: Emitter
2: Collector
3: Base

EIAJ: SC-51

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S

h

FE1

130 to 220 185 to 330

= 10 µA, IE = 080V

= 100 µA, IB = 080 V

= 10 µA, IC = 05V

VCB = 20 V, IE = 0 0.1 µA

*VCE = 10 V, IC = 150 mA 130 330 

VCE = 5 V, IC = 500 mA 50 100 

= 300 mA, IB = 30 mA 0.2 0.4 V

= 300 mA, IB = 30 mA 0.85 1.2 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF

ob

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002 SJC00106BED

1

2SC1509

PC  T

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

10

)
V

(

CE(sat)

1

0.1

0.01

Collector-emitter saturation voltage V

0.001
1 10 100 1 000

CE(sat)

C

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector current IC (mA

IC  V

BE(sat)

 I

75°C

CE

IB = 10 mA

C

IC / IB = 10

Ta = −25°C

= 25°C

T

a

9 mA

8 mA
7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

300

250

FE

200

150

100

Forward current transfer ratio h

50

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

)

0108264

Collector-emitter voltage VCE (V

V

100

)

V

(

BE(sat)

10

1

0.1

25°C

IC  I

B

Base current IB (mA

hFE  I

C

VCE = 10 V

Ta = 75°C

25°C

−25°C

VCE = 10 V

= 25°C

T

a

)

Base-emitter saturation voltage V

0.01
1 10 100 1 000

)

Collector current IC (mA

)

0

1 10 100 1 000

Collector current IC (mA

)

fT  I

200

180

)

160

MHz
(

140

T

120

100

80

60

40

Transition frequency f

20

0

−1 −10 −100

Emitter current IE (mA

2

E

VCB = 10 V
T

= 25°C

a

(pF)

ob

C

Cob  V

50

40

CB

IE = 0
f = 1 MHz
T

= 25°C

a

4

10

3

10

VCB = 20 V

I

CBO

 T

a

)

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

)

Collector-base voltage VCB (V

)

a

T
(

= 25°C

2

a

10

T
(

CBO

I

CBO

I

10

1

0 18060 120

)

Ambient temperature Ta (°C

)

SJC00106BED